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CY7C1303BV25_12

更新时间: 2024-09-13 12:21:15
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
25页 412K
描述
18-Mbit Burst of Two-Pipelined SRAM with QDR® Architecture

CY7C1303BV25_12 数据手册

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CY7C1303BV25  
18-Mbit Burst of Two-Pipelined SRAM  
with QDR® Architecture  
18-Mbit Burst of Two-Pipelined SRAM with QDR® Architecture  
Features  
Functional Description  
Separate independent read and write data ports  
Supports concurrent transactions  
The CY7C1303BV25 is 2.5 V synchronous pipelined SRAM  
equipped with QDR® architecture. QDR architecture consists of  
two separate ports to access the memory array. The read port  
has dedicated data outputs to support read operations and the  
write port has dedicated data inputs to support write operations.  
Access to each port is accomplished through a common address  
bus. The Read address is latched on the rising edge of the K  
167 MHz clock for high bandwidth  
2.5 ns clock-to-valid access time  
Two word burst on all accesses  
Double data rate (DDR) interfaces on both read and write ports  
(data transferred at 333 MHz) at 167 MHz  
clock and the Write address is latched on the rising edge of K  
clock. QDR has separate data inputs and data outputs to  
completely eliminate the need to “turn around” the data bus  
required with common I/O devices. Accesses to the  
CY7C1303BV25 Read and Write ports are completely  
independent of one another. All accesses are initiated  
synchronously on the rising edge of the positive input clock (K).  
In order to maximize data throughput, both Read and Write ports  
are equipped with Double Data Rate (DDR) interfaces.  
Therefore, data can be transferred into the device on every rising  
edge of both input clocks (K and K) and out of the device on every  
rising edge of the output clock (C and C, or K and K when in  
single clock mode) thereby maximizing performance while  
simplifying system design. Each address location is associated  
with two 18-bit words (CY7C1303BV25) that burst sequentially  
into or out of the device.  
Two input clocks (K and K) for precise DDR timing  
SRAM uses rising edges only  
Two input clocks for output data (C and C) to minimize clock  
skew and flight time mismatches.  
Single multiplexed address input bus latches address inputs  
for both read and write ports  
Separate port selects for depth expansion  
Synchronous internally self-timed writes  
2.5 V core power supply with HSTL inputs and outputs  
Available in 165-ball FBGA package (13 × 15 × 1.4 mm)  
Variable drive HSTL output buffers  
Depth expansion is accomplished with a port select input for  
each port. Each Port Selects allow each port to operate  
independently.  
Expanded HSTL output voltage (1.4 V to 1.9 V)  
JTAG Interface  
All synchronous inputs pass through input registers controlled by  
the K or K input clocks. All data outputs pass through output  
registers controlled by the C or C input clocks. Writes are  
conducted with on-chip synchronous self-timed write circuitry.  
Variable Impedance HSTL  
Configurations  
CY7C1303BV25 – 1 M × 18  
Selection Guide  
Description  
Maximum operating frequency  
CY7C1303BV25-167 Unit  
167  
500  
MHz  
mA  
Maximum operating current  
Cypress Semiconductor Corporation  
Document Number: 38-05627 Rev. *F  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised July 24, 2012  

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