Datasheet > CY7C106BN_06

CY7C106BN_06

更新时间： 2024-11-30 05:09:31

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		/
页数	文件大小	规格书
8页	350K
描述
256K x 4 Static RAM

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中文翻译

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数据手册

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CY7C106BN_06 数据手册

CY7C106BN

CY7C1006BN

256K x 4 Static RAM

Features

Functional Description

The CY7C106BN and CY7C1006BN are high-performance

CMOS static RAMs organized as 262,144 words by 4 bits.

Easy memory expansion is provided by an active LOW Chip

Enable (CE), an active LOW Output Enable (OE), and

three-state drivers. These devices have an automatic

power-down feature that reduces power consumption by more

than 65% when the devices are deselected.

• High speed

— t_AA= 15 ns

• CMOS for optimum speed/power

• Low active power

— 495 mW

• Low standby power

— 275 mW

Writing to the devices is accomplished by taking Chip Enable

(CE) and Write Enable (WE) inputs LOW. Data on the four I/O

pins (I/O₀through I/O₃) is then written into the location

specified on the address pins (A₀through A₁₇).

• 2.0V data retention (optional)

• Automatic power-down when deselected

• TTL-compatible inputs and outputs

Reading from the devices is accomplished by taking Chip

Enable (CE) and Output Enable (OE) LOW while forcing Write

Enable (WE) HIGH. Under these conditions, the contents of

the memory location specified by the address pins will appear

on the four I/O pins.

The four input/output pins (I/O₀through I/O₃) are placed in a

high-impedance state when the devices are deselected (CE

HIGH), the outputs are disabled (OE HIGH), or during a write

operation (CE and WE LOW).

The CY7C106BN is available in a standard 400-mil-wide SOJ;

the CY7C1006BN is available in a standard 300-mil-wide SOJ.

Logic Block Diagram

Pin Configuration

SOJ

Top View

INPUTBUFFER

I/O

GND

512 x 512 x 4

ARRAY

POWER

DOWN

COLUMN

DECODER

Cypress Semiconductor Corporation

Document #: 001-06429 Rev. **

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised February 1, 2006

12 3 4 5 6 7 8

中文翻译

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与CY7C106BN_06相关器件

型号	品牌	获取价格	描述	数据表
CY7C106BN_11	CYPRESS	获取价格	256K x 4 Static RAM
CY7C106BN-15VC	CYPRESS	获取价格	256K x 4 Static RAM
CY7C106BN-15VCT	CYPRESS	获取价格	Standard SRAM, 256KX4, 15ns, CMOS, PDSO28, 0.400 INCH, SOJ-28
CY7C106BN-20VC	CYPRESS	获取价格	256K x 4 Static RAM
CY7C106BN-20VCT	CYPRESS	获取价格	Standard SRAM, 256KX4, 20ns, CMOS, PDSO28, 0.400 INCH, SOJ-28
CY7C106D	CYPRESS	获取价格	1-Mbit (256K x 4) Static RAM
CY7C106D-10VXC	CYPRESS	获取价格	Standard SRAM, 256KX4, 10ns, CMOS, PDSO28, 0.400 INCH, LEAD FREE, SOJ-28
CY7C106D-10VXI	CYPRESS	获取价格	1-Mbit (256K x 4) Static RAM
CY7C106D-10VXIT	CYPRESS	获取价格	暂无描述
CY7C106D-12VXC	CYPRESS	获取价格	Standard SRAM, 256KX4, 12ns, CMOS, PDSO28, 0.400 INCH, LEAD FREE, SOJ-28