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CY7C1071AV33 PDF预览

CY7C1071AV33

更新时间: 2024-12-01 05:09:31
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
10页 148K
描述
32-Mbit (2M x 16) Static RAM

CY7C1071AV33 数据手册

 浏览型号CY7C1071AV33的Datasheet PDF文件第2页浏览型号CY7C1071AV33的Datasheet PDF文件第3页浏览型号CY7C1071AV33的Datasheet PDF文件第4页浏览型号CY7C1071AV33的Datasheet PDF文件第5页浏览型号CY7C1071AV33的Datasheet PDF文件第6页浏览型号CY7C1071AV33的Datasheet PDF文件第7页 
PRELIMINARY  
CY7C1071AV33  
32-Mbit (2M x 16) Static RAM  
Low Enable (BLE) is LOW, then data from the I/O pins (I/O0  
through I/O7), is written into the location specified on the ad-  
dress pins (A0 through A20). If Byte High Enable (BHE) is  
LOW, then data from I/O pins (I/O8 through I/O15) is written into  
the location specified on the address pins (A0 through A20).  
Features  
• High density 32-Mbit SRAM  
• High speed  
— tAA = 10 ns  
Reading from the device is accomplished by enabling the chip  
by taking CE HIGH while forcing the Output Enable (OE) LOW  
and the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is  
LOW, then data from the memory location specified by the  
address pins will appear on I/O0 to I/O7. If Byte High Enable  
(BHE) is LOW, then data from memory will appear on I/O8 to  
I/O15. See the truth table at the back of this data sheet for a  
complete description of Read and Write modes.  
• Low active power  
— ICC = 450 mA  
• Operating voltages of 3.3 ± 0.3V  
• 2.0V data retention  
• Automatic power-down when deselected  
• TTL-compatible inputs and outputs  
• Available in standard 119-ball FBGA  
The input/output pins (I/O0 through I/O15) are placed in a  
high-impedance state when the device is deselected (CE  
LOW), the outputs are disabled (OE HIGH), the BHE and BLE  
are disabled (BHE, BLE HIGH), or during a Write operation  
(CE HIGH, and WE LOW).  
Functional Description  
The CY7C1071AV33 is a 3.3V high-performance 32-Megabit  
static RAM organized as a 2,097,152 words by 16 bits.  
The CY7C1071AV33 is available in a 119-ball grid array  
(FBGA) package.  
Writing to the device is accomplished by enabling the chip (CE  
HIGH) while forcing the Write Enable (WE) input LOW. If Byte  
Logic Block Diagram  
DATA-IN DRIVERS  
A10  
A 9  
A 8  
A 7  
A 6  
A 5  
A 4  
A 3  
2048K × 16  
RAM Array  
I/O0–I/O7  
I/O8–I/O15  
A 2  
A 1  
A 0  
COLUMN DECODER  
BHE  
WE  
CE  
OE  
BLE  
Power-down  
Circuit  
CE  
Cypress Semiconductor Corporation  
Document #: 38-05634 Rev. *A  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised September 1, 2005  

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