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CY7C106-12VC PDF预览

CY7C106-12VC

更新时间： 2024-09-15 23:45:23
品牌 Logo 应用领域
其他 - ETC 静态存储器
页数 文件大小 规格书
9页 245K
描述
x4 SRAM

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中文翻译

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CY7C106-12VC 数据手册

 浏览型号CY7C106-12VC的Datasheet PDF文件第2页浏览型号CY7C106-12VC的Datasheet PDF文件第3页浏览型号CY7C106-12VC的Datasheet PDF文件第4页浏览型号CY7C106-12VC的Datasheet PDF文件第5页浏览型号CY7C106-12VC的Datasheet PDF文件第6页浏览型号CY7C106-12VC的Datasheet PDF文件第7页 
006  
CY7C106  
CY7C1006  
256K x 4 Static RAM  
an active LOW output enable (OE), and three-state drivers.  
These devices have an automatic power-down feature that re-  
duces power consumption by more than 65% when the devic-  
es are deselected.  
Features  
• High speed  
— tAA = 12 ns  
• CMOS for optimum speed/power  
• Low active power  
Writing to the devices is accomplished by taking chip enable  
(CE) and write enable (WE) inputs LOW. Data on the four I/O  
pins (I/O0 through I/O3) is then written into the location speci-  
fied on the address pins (A0 through A17).  
— 910 mW  
• Low standby power  
— 275 mW  
Reading from the devices is accomplished by taking chip en-  
able (CE) and output enable (OE) LOW while forcing write en-  
able (WE) HIGH. Under these conditions, the contents of the  
memory location specified by the address pins will appear on  
the four I/O pins.  
• 2.0V data retention (optional)  
— 100 µW  
• Automatic power-down when deselected  
• TTL-compatible inputs and outputs  
The four input/output pins (I/O0 through I/O3) are placed in a  
high-impedance state when the devices are deselected (CE  
HIGH), the outputs are disabled (OE HIGH), or during a write  
operation (CE and WE LOW).  
Functional Description  
The CY7C106 and CY7C1006 are high-performance CMOS  
static RAMs organized as 262,144 words by 4 bits. Easy mem-  
ory expansion is provided by an active LOW chip enable (CE),  
The CY7C106 is available in a standard 400-mil-wide SOJ; the  
CY7C1006 is available in a standard 300-mil-wide SOJ.  
Logic Block Diagram  
Pin Configuration  
SOJ  
Top View  
28  
27  
26  
1
2
3
4
5
6
A
V
CC  
0
A
A
17  
A
16  
A
15  
1
A
2
3
A
25  
24  
A
A
14  
A
13  
A
12  
4
23  
22  
A
5
A
7
8
9
10  
11  
12  
13  
6
A
21  
20  
19  
18  
17  
A
7
11  
INPUTBUFFER  
A
NC  
I/O  
8
A
9
3
2
1
A
1
A
10  
I/O  
I/O  
I/O  
A
A
3
I/O  
I/O  
I/O  
I/O  
CE  
OE  
GND  
2
3
2
1
0
16  
15  
0
14  
WE  
A
4
A
5
512 x 512 x 4  
ARRAY  
C106–2  
A
6
A
7
A
8
A
9
POWER  
DOWN  
COLUMN  
DECODER  
CE  
WE  
OE  
C106–1  
Selection Guide  
7C106-12  
7C1006-12  
7C106-15  
7C1006-15  
7C106-20  
7C1006-20  
7C106-25  
7C1006-25  
7C106-35  
35  
Maximum Access Time (ns)  
12  
15  
20  
25  
Maximum Operating  
Current (mA)  
165  
155  
145  
130  
125  
Maximum Standby  
Current (mA)  
50  
30  
30  
30  
25  
Cypress Semiconductor Corporation  
•
3901 North First Street  
•
San Jose  
•
CA 95134  
•
408-943-2600  
Document #: 38-05033 Rev. **  
Revised July 9, 1998  
1234567...9

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