PRELIMINARY
CY7C1061AV25
1M x 16 Static RAM
specified on the address pins (A0 through A19). If Byte High
Enable (BHE) is LOW, then data from I/O pins (I/O8 through
I/O15) is written into the location specified on the address pins
(A0 through A19).
Features
• High speed
— tAA = 8, 10, 12 ns
Reading from the device is accomplished by enabling the chip
by taking CE1 LOW and CE2 HIGH while forcing the Output
Enable (OE) LOW and the Write Enable (WE) HIGH. If Byte
Low Enable (BLE) is LOW, then data from the memory location
specified by the address pins will appear on I/O0 to I/O7. If Byte
High Enable (BHE) is LOW, then data from memory will appear
on I/O8 to I/O15. See the truth table at the back of this data
sheet for a complete description of Read and Write modes.
• Low active power
— 1080 mW (max.)
• Operating voltages of 2.5 ± 0.2V
• 1.5V data retention
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE1 and CE2 features
The input/output pins (I/O0 through I/O15) are placed in a
high-impedance state when the device is deselected (CE1
HIGH / CE2 LOW), the outputs are disabled (OE HIGH), the
BHE and BLE are disabled (BHE, BLE HIGH), or during a
Write operation (CE1 LOW, CE2 HIGH, and WE LOW).
Functional Description
The CY7C1061AV25 is a high-performance CMOS Static
RAM organized as 1,048,576 words by 16 bits.
Writing to the device is accomplished by enabling the chip
(CE1 LOW and CE2 HIGH) while forcing the Write Enable
(WE) input LOW. If Byte Low Enable (BLE) is LOW, then data
from I/O pins (I/O0 through I/O7), is written into the location
The CY7C1061AV25 is available in a 54-pin TSOP II package
with center power and ground (revolutionary) pinout, and a
48-ball fine-pitch ball grid array (FBGA) package.
Pin Configuration
Logic Block Diagram
TSOP II (Top View)
1
54 I/O
11
INPUT BUFFER
I/O
V
12
CC
53
52
51
50
V
I/O
I/O
2
3
4
5
6
SS
I/O
13
14
10
A
0
A
1
I/O
V
9
V
CC
SS
A
2
I/O
49 I/O
15
8
A
3
4
I/O –I/O
1M x 16
ARRAY
0
7
A
A
3
A
A
1
A
48
47
A
5
A
6
7
A
4
8
A
5
6
4096 x 4096
I/O –I/O
8
15
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
A
7
A
9
2
A
10
11
12
13
A
8
7
A
A
9
8
A
0
NC
9
BHE
CE
OE
1
V
V
CC
14
15
16
17
18
19
20
21
22
23
SS
WE
DNU (Do Not Use)
BLE
COLUMN
DECODER
CE
2
A
19
A
10
A
18
A
11
A
12
A
13
A
A
A
17
16
15
BHE
WE
A
14
I/O
V
I/O
V
0
7
CE
2
1
CC
SS
CE
24
25
26
27
I/O
I/O
OE
BLE
6
5
1
2
I/O
I/O
V
V
SS
CC
I/O
I/O
3
4
Selection Guide
-8
8
-10
10
-12
12
Unit
ns
Maximum Access Time
Maximum Operating Current
Commercial
Industrial
300
300
50
275
275
50
260
260
50
mA
Maximum CMOS Standby Current
Commercial/Industrial
mA
Cypress Semiconductor Corporation
Document #: 38-05331 Rev. **
•
3901 North First Street
•
San Jose, CA 95134
•
408-943-2600
Revised January 27, 2003