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CY7C1049L-20VC PDF预览

CY7C1049L-20VC

更新时间: 2024-11-05 21:58:39
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
10页 131K
描述
512K x 8 Static RAM

CY7C1049L-20VC 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOJ
包装说明:0.400 INCH, PLASTIC, SOJ-36针数:36
Reach Compliance Code:not_compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.72
最长访问时间:20 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-J36JESD-609代码:e0
长度:23.495 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:36
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装等效代码:SOJ36,.44
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):225
电源:5 V认证状态:Not Qualified
座面最大高度:3.683 mm最大待机电流:0.0002 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.185 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:10.16 mmBase Number Matches:1

CY7C1049L-20VC 数据手册

 浏览型号CY7C1049L-20VC的Datasheet PDF文件第2页浏览型号CY7C1049L-20VC的Datasheet PDF文件第3页浏览型号CY7C1049L-20VC的Datasheet PDF文件第4页浏览型号CY7C1049L-20VC的Datasheet PDF文件第5页浏览型号CY7C1049L-20VC的Datasheet PDF文件第6页浏览型号CY7C1049L-20VC的Datasheet PDF文件第7页 
049  
PRELIMINARY  
CY7C1049  
512K x 8 Static RAM  
is provided by an active LOW chip enable (CE), an active LOW  
output enable (OE), and three-state drivers. Writing to the de-  
vice is accomplished by taking chip enable (CE) and write en-  
able (WE) inputs LOW. Data on the eight I/O pins (I/O0 through  
I/O7) is then written into the location specified on the address  
pins (A0 through A18).  
Features  
• High speed  
— tAA = 15 ns  
• Low active power  
— 1210 mW (max.)  
Reading from the device is accomplished by taking chip en-  
able (CE) and output enable (OE) LOW while forcing write en-  
able (WE) HIGH. Under these conditions, the contents of the  
memory location specified by the address pins will appear on  
the I/O pins.  
• Low CMOS standby power (Commercial L version)  
— 2.75 mW (max.)  
• 2.0V Data Retention (400 µW at 2.0V retention)  
• Automatic power-down when deselected  
• TTL-compatible inputs and outputs  
• Easy memory expansion with CE and OE features  
The eight input/output pins (I/O0 through I/O7) are placed in a  
high-impedance state when the device is deselected (CE  
HIGH), the outputs are disabled (OE HIGH), or during a write  
operation (CE LOW, and WE LOW).  
Functional Description  
The CY7C1049 is available in a standard 400-mil-wide 36-pin  
SOJ package with center power and ground (revolutionary)  
pinout.  
The CY7C1049 is a high-performance CMOS static RAM or-  
ganized as 524,288 words by 8 bits. Easy memory expansion  
Logic Block Diagram  
Pin Configuration  
SOJ  
Top View  
A0  
A1  
36  
35  
34  
33  
32  
1
2
3
4
5
6
7
8
9
NC  
A18  
A17  
A16  
A15  
A2  
A3  
A4  
CE  
I/O0  
I/O1  
VCC  
31  
30  
29  
28  
OE  
I/O7  
I/O6  
I/O  
0
GND  
VCC  
I/O5  
I/O4  
A14  
A13  
A12  
A11  
A10  
NC  
INPUT BUFFER  
27  
26  
25  
GND 10  
A
1
0
I/O  
I/O  
I/O2  
I/O3  
WE  
11  
12  
13  
1
A
A
2
24  
23  
22  
21  
20  
19  
2
A
A5  
A6  
A7  
A8  
A9  
3
4
14  
15  
16  
17  
18  
A
A
6
5
I/O  
I/O  
I/O  
3
4
5
512K x 8  
ARRAY  
A
A
7
A
8
A
9
10492  
A
10  
I/O  
6
7
POWER  
DOWN  
COLUMN  
DECODER  
CE  
I/O  
WE  
10491  
OE  
Selection Guide  
7C1049-12  
7C1049-15  
7C1049-17  
7C1049-20  
7C1049-25  
Maximum Access Time (ns)  
12  
240  
8
15  
220  
8
17  
195  
8
20  
185  
8
25  
180  
8
Maximum Operating Current (mA)  
Maximum CMOS Standby  
Current (mA)  
Coml  
Coml  
Indl  
L
0.5  
9
0.5  
9
0.5  
9
0.5  
9
0.5  
9
Military  
10  
10  
Shaded areas contain advance information.  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
Document #: 38-05063 Rev. **  
Revised August 31, 2001  

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