5秒后页面跳转
CY7C1012AV33-12BGI PDF预览

CY7C1012AV33-12BGI

更新时间: 2024-11-08 22:03:15
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器
页数 文件大小 规格书
9页 178K
描述
512K x 24 Static RAM

CY7C1012AV33-12BGI 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:BGA
包装说明:BGA, BGA119,7X17,50针数:119
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.91
Is Samacsys:N最长访问时间:12 ns
I/O 类型:COMMONJESD-30 代码:R-PBGA-B119
JESD-609代码:e0长度:22 mm
内存密度:12582912 bit内存集成电路类型:STANDARD SRAM
内存宽度:24湿度敏感等级:3
功能数量:1端子数量:119
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX24
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装等效代码:BGA119,7X17,50
封装形状:RECTANGULAR封装形式:GRID ARRAY
并行/串行:PARALLEL峰值回流温度(摄氏度):220
电源:3.3 V认证状态:Not Qualified
座面最大高度:2.4 mm最大待机电流:0.05 A
最小待机电流:3 V子类别:SRAMs
最大压摆率:0.26 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:BALL端子节距:1.27 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:14 mmBase Number Matches:1

CY7C1012AV33-12BGI 数据手册

 浏览型号CY7C1012AV33-12BGI的Datasheet PDF文件第2页浏览型号CY7C1012AV33-12BGI的Datasheet PDF文件第3页浏览型号CY7C1012AV33-12BGI的Datasheet PDF文件第4页浏览型号CY7C1012AV33-12BGI的Datasheet PDF文件第5页浏览型号CY7C1012AV33-12BGI的Datasheet PDF文件第6页浏览型号CY7C1012AV33-12BGI的Datasheet PDF文件第7页 
CY7C1012AV33  
512K x 24 Static RAM  
Writing the data bytes into the SRAM is accomplished when  
the chip select controlling that byte is LOW and the write  
enable input (WE) input is LOW. Data on the respective  
input/output (I/O) pins is then written into the location specified  
on the address pins (A0A18). Asserting all of the chip selects  
LOW and write enable LOW will write all 24 bits of data into  
the SRAM. Output enable (OE) is ignored while in WRITE  
mode.  
Features  
• High speed  
— tAA = 8, 10, 12 ns  
• Low active power  
— 1080 mW (max.)  
• Operating voltages of 3.3 ± 0.3V  
• 2.0V data retention  
• Automatic power-down when deselected  
• TTL-compatible inputs and outputs  
• Easy memory expansion with CE0, CE1 and CE2  
features  
Data bytes can also be individually read from the device.  
Reading a byte is accomplished when the chip select  
controlling that byte is LOW and write enable (WE) HIGH while  
output enable (OE) remains LOW. Under these conditions, the  
contents of the memory location specified on the address pins  
will appear on the specified data input/output (I/O) pins.  
Asserting all the chip selects LOW will read all 24 bits of data  
from the SRAM.  
Functional Description  
The CY7C1012AV33 is a high-performance CMOS static RAM  
organized as 512K words by 24 bits. Each data byte is  
separately controlled by the individual chip selects (CE0, CE1,  
CE2). CE0 controls the data on the I/O0I/O7, while CE1  
controls the data on I/O8I/O15, and CE2 controls the data on  
the data pins I/O16I/O23. This device has an automatic  
power-down feature that significantly reduces power  
consumption when deselected.  
The 24 I/O pins (I/O0I/O23) are placed in a high-impedance  
state when all the chip selects are HIGH or when the output  
enable (OE) is HIGH during a READ mode. For further details,  
refer to the truth table of this data sheet.  
The CY7C1012AV33 is available in a standard 119-ball BGA.  
Functional Block Diagram  
INPUT BUFFER  
A
0
A
1
A
2
I/O I/O  
0
7
A
3
4
512K x 24  
ARRAY  
A
I/O I/O  
8
15  
A
5
6
4096 x 4096  
A
I/O I/O  
16  
23  
A
7
A
8
A
9
CE , CE , CE  
0
1
2
COLUMN  
DECODER  
WE  
CONTROL LOGIC  
OE  
Selection Guide  
8  
8
10  
10  
12  
12  
Unit  
ns  
Maximum Access Time  
Maximum Operating Current  
Commercial  
300  
300  
50  
275  
275  
50  
260  
260  
50  
mA  
Industrial  
Maximum CMOS Standby Current  
Commercial/Industrial  
mA  
Cypress Semiconductor Corporation  
Document #: 38-05254 Rev. *D  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Revised November 12, 2002  

与CY7C1012AV33-12BGI相关器件

型号 品牌 获取价格 描述 数据表
CY7C1012AV33-15BGC CYPRESS

获取价格

Standard SRAM, 512KX24, 15ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
CY7C1012AV33-15BGI CYPRESS

获取价格

Standard SRAM, 512KX24, 15ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
CY7C1012AV33-8BGC CYPRESS

获取价格

512K x 24 Static RAM
CY7C1012AV33-8BGCT CYPRESS

获取价格

Standard SRAM, 512KX24, 8ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
CY7C1012AV33-8BGI CYPRESS

获取价格

512K x 24 Static RAM
CY7C1012AV33-8BGIT CYPRESS

获取价格

Standard SRAM, 512KX24, 8ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
CY7C1012DV33 CYPRESS

获取价格

12-Mbit (512K X 24) Static RAM
CY7C1012DV33_07 CYPRESS

获取价格

12-Mbit (512K X 24) Static RAM
CY7C1012DV33_09 CYPRESS

获取价格

12-Mbit (512K X 24) Static RAM
CY7C1012DV33-10BGXI CYPRESS

获取价格

12-Mbit (512K X 24) Static RAM