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CY7C1012AV33-8BGIT PDF预览

CY7C1012AV33-8BGIT

更新时间: 2024-11-27 13:07:11
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
9页 178K
描述
Standard SRAM, 512KX24, 8ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119

CY7C1012AV33-8BGIT 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:BGA,针数:119
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.79
Is Samacsys:N最长访问时间:8 ns
JESD-30 代码:R-PBGA-B119JESD-609代码:e0
长度:22 mm内存密度:12582912 bit
内存集成电路类型:STANDARD SRAM内存宽度:24
功能数量:1端子数量:119
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX24
封装主体材料:PLASTIC/EPOXY封装代码:BGA
封装形状:RECTANGULAR封装形式:GRID ARRAY
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:2.4 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:BALL端子节距:1.27 mm
端子位置:BOTTOM宽度:14 mm
Base Number Matches:1

CY7C1012AV33-8BGIT 数据手册

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CY7C1012AV33  
512K x 24 Static RAM  
Writing the data bytes into the SRAM is accomplished when  
the chip select controlling that byte is LOW and the write  
enable input (WE) input is LOW. Data on the respective  
input/output (I/O) pins is then written into the location specified  
on the address pins (A0A18). Asserting all of the chip selects  
LOW and write enable LOW will write all 24 bits of data into  
the SRAM. Output enable (OE) is ignored while in WRITE  
mode.  
Features  
• High speed  
— tAA = 8, 10, 12 ns  
• Low active power  
— 1080 mW (max.)  
• Operating voltages of 3.3 ± 0.3V  
• 2.0V data retention  
• Automatic power-down when deselected  
• TTL-compatible inputs and outputs  
• Easy memory expansion with CE0, CE1 and CE2  
features  
Data bytes can also be individually read from the device.  
Reading a byte is accomplished when the chip select  
controlling that byte is LOW and write enable (WE) HIGH while  
output enable (OE) remains LOW. Under these conditions, the  
contents of the memory location specified on the address pins  
will appear on the specified data input/output (I/O) pins.  
Asserting all the chip selects LOW will read all 24 bits of data  
from the SRAM.  
Functional Description  
The CY7C1012AV33 is a high-performance CMOS static RAM  
organized as 512K words by 24 bits. Each data byte is  
separately controlled by the individual chip selects (CE0, CE1,  
CE2). CE0 controls the data on the I/O0I/O7, while CE1  
controls the data on I/O8I/O15, and CE2 controls the data on  
the data pins I/O16I/O23. This device has an automatic  
power-down feature that significantly reduces power  
consumption when deselected.  
The 24 I/O pins (I/O0I/O23) are placed in a high-impedance  
state when all the chip selects are HIGH or when the output  
enable (OE) is HIGH during a READ mode. For further details,  
refer to the truth table of this data sheet.  
The CY7C1012AV33 is available in a standard 119-ball BGA.  
Functional Block Diagram  
INPUT BUFFER  
A
0
A
1
A
2
I/O I/O  
0
7
A
3
4
512K x 24  
ARRAY  
A
I/O I/O  
8
15  
A
5
6
4096 x 4096  
A
I/O I/O  
16  
23  
A
7
A
8
A
9
CE , CE , CE  
0
1
2
COLUMN  
DECODER  
WE  
CONTROL LOGIC  
OE  
Selection Guide  
8  
8
10  
10  
12  
12  
Unit  
ns  
Maximum Access Time  
Maximum Operating Current  
Commercial  
300  
300  
50  
275  
275  
50  
260  
260  
50  
mA  
Industrial  
Maximum CMOS Standby Current  
Commercial/Industrial  
mA  
Cypress Semiconductor Corporation  
Document #: 38-05254 Rev. *D  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Revised November 12, 2002  

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