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CY7C1012DV33-10BGXIT PDF预览

CY7C1012DV33-10BGXIT

更新时间: 2024-09-18 13:07:11
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赛普拉斯 - CYPRESS /
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CY7C1012DV33-10BGXIT 数据手册

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CY7C1012DV33  
12-Mbit (512K X 24) Static RAM  
Features  
Functional Description  
High speed  
tAA = 10 ns  
Low active power  
ICC = 175 mA at 10 ns  
Low CMOS standby power  
ISB2 = 25 mA  
The CY7C1012DV33 is a high performance CMOS static RAM  
organized as 512K words by 24 bits. Each data byte is separately  
controlled by the individual chip selects (CE1, CE2, and CE3).  
CE1 controls the data on the I/O0 – I/O7, while CE2 controls the  
data on I/O8 – I/O15, and CE3 controls the data on the data pins  
I/O16 – I/O23. This device has an automatic power down feature  
that significantly reduces power consumption when deselected.  
Writing the data bytes into the SRAM is accomplished when the  
chip select controlling that byte is LOW and the write enable input  
(WE) input is LOW. Data on the respective input and output (I/O)  
pins is then written into the location specified on the address pins  
(A0 – A18). Asserting all of the chip selects LOW and write enable  
LOW writes all 24 bits of data into the SRAM. Output enable (OE)  
is ignored while in WRITE mode.  
Operating voltages of 3.3 ± 0.3V  
2.0V data retention  
Automatic power down when deselected  
TTL compatible inputs and outputs  
Available in Pb-free standard 119-ball PBGA  
Data bytes are also individually read from the device. Reading a  
byte is accomplished when the chip select controlling that byte  
is LOW and write enable (WE) HIGH, while output enable (OE)  
remains LOW. Under these conditions, the contents of the  
memory location specified on the address pins appear on the  
specified data input and output (I/O) pins. Asserting all the chip  
selects LOW reads all 24 bits of data from the SRAM.  
The 24 I/O pins (I/O0 – I/O23) are placed in a high impedance  
state when all the chip selects are HIGH or when the output  
enable (OE) is HIGH during a READ mode. For more infor-  
mation, see the Truth Table on page 8.  
Logic Block Diagram  
INPUT BUFFER  
I/O0 – I/O7  
I/O8 – I/O15  
I/O16 – I/O23  
512K x 24  
ARRAY  
A(9:0)  
CE1, CE2, CE3  
COLUMN  
DECODER  
WE  
CONTROL LOGIC  
OE  
A(18:10)  
Cypress Semiconductor Corporation  
Document Number: 38-05610 Rev. *D  
198 Champion Court  
San Jose  
,
CA 95134-1709  
408-943-2600  
Revised November 6, 2008  
[+] Feedback  

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