CY15B108QN
CY15V108QN
Excelon™ LP 8-Mbit (1024K × 8)
Serial (SPI) F-RAM
CY15B108QN/CY15V108QN, Excelon™ LP 8-Mbit (1024K
× 8) Serial (SPI) F-RAM
Features
Functional Description
■ 8-Mbit ferroelectric random access memory (F-RAM) logically
organized as 1024K × 8
❐ Virtually unlimited endurance 1000 trillion (1015) read/writes
❐ 151-year data retention (See Data Retention and Endurance
on page 20)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
The Excelon LP CY15X108QN is a low power, 8-Mbit nonvolatile
memory employing an advanced ferroelectric process. A ferro-
electric random access memory or F-RAM is nonvolatile and
performs reads and writes similar to a RAM. It provides reliable
data retention for 151 years while eliminating the complexities,
overhead, and system-level reliability problems caused by serial
flash, EEPROM, and other nonvolatile memories.
Unlike serial flash and EEPROM, the CY15X108QN performs
write operations at bus speed. No write delays are incurred. Data
is written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared to other
nonvolatile memories. The CY15X108QN is capable of
supporting 1015 read/write cycles, or 1000 million times more
write cycles than EEPROM.
■ Fast serial peripheral interface (SPI)
❐ Up to 40 MHz frequency
❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
■ Sophisticated write protection scheme
❐ Hardware protection using the Write Protect (WP) pin
❐ Software protection using Write Disable (WRDI) instruction
❐ Software block protection for 1/4, 1/2, or entire array
■ Device ID and Serial Number
❐ Manufacturer ID and Product ID
❐ Unique Device ID
These capabilities make the CY15X108QN ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
❐ Serial Number
■ Dedicated 256-byte special sector F-RAM
❐ Dedicated special sector write and read
❐ Stored content can survive up to three standard reflow sol-
dering cycles
The CY15X108QN provides substantial benefits to users of
serial EEPROM or flash as a hardware drop-in replacement. The
CY15X108QN uses the high-speed SPI bus, which enhances
the high-speed write capability of F-RAM technology. The device
incorporates a read-only Device ID and Unique ID features,
which allow the host to determine the manufacturer, product
density, product revision, and unique ID for each part. The device
also provides a writable, 8-byte serial number registers, which
can be used to identify a specific board or a system.
■ Low-power consumption
❐ 2.6 mA (typ) active current at 40 MHz
❐ 3.5 µA (typ) standby current
❐ 0.90 µA (typ) Deep Power Down mode current
❐ 0.1 µA (typ) Hibernate mode current
For a complete list of related resources, click here.
■ Low-voltage operation
❐ CY15V108QN: VDD = 1.71 V to 1.89 V
❐ CY15B108QN: VDD = 1.8 V to 3.6 V
■ Commercial and industrial operating temperature
❐ Commercial operating temperature: 0 °C to +70 °C
❐ Industrial operating temperature: 40 °C to +85 °C
■ Packages
❐ 8-pin Small Outline Integrated Circuit (SOIC) package
❐ 8-pin Grid-Array Quad Flat No-Lead (GQFN) package
■ Restriction of hazardous substances (RoHS) compliant
Cypress Semiconductor Corporation
Document Number: 002-21761 Rev. *I
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised July 15, 2019