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CY15B108QN-40LPXI PDF预览

CY15B108QN-40LPXI

更新时间: 2024-09-19 20:51:35
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 光电二极管内存集成电路
页数 文件大小 规格书
29页 445K
描述
Memory Circuit,

CY15B108QN-40LPXI 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:GQFN-8Reach Compliance Code:compliant
风险等级:1.97JESD-30 代码:R-PDSO-N8
长度:3.28 mm内存密度:8388608 bit
内存集成电路类型:MEMORY CIRCUIT内存宽度:8
功能数量:1端子数量:8
字数:1048576 words字数代码:1000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX8
封装主体材料:PLASTIC/EPOXY封装代码:VSON
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE
峰值回流温度(摄氏度):NOT SPECIFIED座面最大高度:0.55 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:NO LEAD端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.23 mmBase Number Matches:1

CY15B108QN-40LPXI 数据手册

 浏览型号CY15B108QN-40LPXI的Datasheet PDF文件第2页浏览型号CY15B108QN-40LPXI的Datasheet PDF文件第3页浏览型号CY15B108QN-40LPXI的Datasheet PDF文件第4页浏览型号CY15B108QN-40LPXI的Datasheet PDF文件第5页浏览型号CY15B108QN-40LPXI的Datasheet PDF文件第6页浏览型号CY15B108QN-40LPXI的Datasheet PDF文件第7页 
CY15B108QN  
CY15V108QN  
Excelon™ LP 8-Mbit (1024K × 8)  
Serial (SPI) F-RAM  
CY15B108QN/CY15V108QN, Excelon™ LP 8-Mbit (1024K  
× 8) Serial (SPI) F-RAM  
Features  
Functional Description  
8-Mbit ferroelectric random access memory (F-RAM) logically  
organized as 1024K × 8  
Virtually unlimited endurance 1000 trillion (1015) read/writes  
151-year data retention (See Data Retention and Endurance  
on page 20)  
NoDelay™ writes  
Advanced high-reliability ferroelectric process  
The Excelon LP CY15X108QN is a low power, 8-Mbit nonvolatile  
memory employing an advanced ferroelectric process. A ferro-  
electric random access memory or F-RAM is nonvolatile and  
performs reads and writes similar to a RAM. It provides reliable  
data retention for 151 years while eliminating the complexities,  
overhead, and system-level reliability problems caused by serial  
flash, EEPROM, and other nonvolatile memories.  
Unlike serial flash and EEPROM, the CY15X108QN performs  
write operations at bus speed. No write delays are incurred. Data  
is written to the memory array immediately after each byte is  
successfully transferred to the device. The next bus cycle can  
commence without the need for data polling. In addition, the  
product offers substantial write endurance compared to other  
nonvolatile memories. The CY15X108QN is capable of  
supporting 1015 read/write cycles, or 1000 million times more  
write cycles than EEPROM.  
Fast serial peripheral interface (SPI)  
Up to 40 MHz frequency  
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)  
Sophisticated write protection scheme  
Hardware protection using the Write Protect (WP) pin  
Software protection using Write Disable (WRDI) instruction  
Software block protection for 1/4, 1/2, or entire array  
Device ID and Serial Number  
Manufacturer ID and Product ID  
Unique Device ID  
These capabilities make the CY15X108QN ideal for nonvolatile  
memory applications, requiring frequent or rapid writes.  
Examples range from data collection, where the number of write  
cycles may be critical, to demanding industrial controls where the  
long write time of serial flash or EEPROM can cause data loss.  
Serial Number  
Dedicated 256-byte special sector F-RAM  
Dedicated special sector write and read  
Stored content can survive up to three standard reflow sol-  
dering cycles  
The CY15X108QN provides substantial benefits to users of  
serial EEPROM or flash as a hardware drop-in replacement. The  
CY15X108QN uses the high-speed SPI bus, which enhances  
the high-speed write capability of F-RAM technology. The device  
incorporates a read-only Device ID and Unique ID features,  
which allow the host to determine the manufacturer, product  
density, product revision, and unique ID for each part. The device  
also provides a writable, 8-byte serial number registers, which  
can be used to identify a specific board or a system.  
Low-power consumption  
2.6 mA (typ) active current at 40 MHz  
3.5 µA (typ) standby current  
0.90 µA (typ) Deep Power Down mode current  
0.1 µA (typ) Hibernate mode current  
For a complete list of related resources, click here.  
Low-voltage operation  
CY15V108QN: VDD = 1.71 V to 1.89 V  
CY15B108QN: VDD = 1.8 V to 3.6 V  
Commercial and industrial operating temperature  
Commercial operating temperature: 0 °C to +70 °C  
Industrial operating temperature: 40 °C to +85 °C  
Packages  
8-pin Small Outline Integrated Circuit (SOIC) package  
8-pin Grid-Array Quad Flat No-Lead (GQFN) package  
Restriction of hazardous substances (RoHS) compliant  
Cypress Semiconductor Corporation  
Document Number: 002-21761 Rev. *I  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised July 15, 2019  

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