Datasheet > CY15B201QN-50SXE

CY15B201QN-50SXE

更新时间： 2024-11-19 14:48:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
39页	403K
描述
1Mbit 3.3V Automotive(E) 50MHz SPI EXCELON? F-RAM in 8-pin SOIC

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CY15B201QN-50SXE 数据手册

CY15B201QN

1-Mb EXCELON™ Auto Ferroelectric RAM

(F-RAM)

Serial (SPI), 128 K × 8, automotive grade 1

Features

• 1-Mb ferroelectric random access memory (F-RAM) logically organized as 128 K × 8

- Virtually unlimited endurance of 10 trillion (10¹³) read/write cycles

- 121-year data retention (see Data retention and endurance)

- Infineon instant non-volatile write technology

- Advanced high-reliability ferroelectric process

• Fast serial peripheral interface (SPI)

- Up to 50 MHz frequency

- Supports SPI mode 0 (0, 0) and mode 3 (1, 1)

• Sophisticated write protection scheme

- Hardware protection using the Write Protect (WP) pin

- Software protection using Write Disable (WRDI) instruction

- Software block protection for 1/4, 1/2, or entire array

• Device ID and serial number

- Device ID includes manufacturer ID and product ID

- Unique ID

- Serial number

• Dedicated 256-byte special sector F-RAM

- Dedicated special sector write and read

- Stored content can survive up to 3 standard reflow soldering cycles

• Low-power consumption

- 4.3 mA (typ) active current at 40 MHz

- 3.2 µA (typ) standby current

- 1.3 µA (typ) Deep Power Down mode current

- 0.1 µA (typ) Hibernate mode current

• Low-voltage operation:

- CY15B201QN: V_DD= 1.8 V to 3.6 V

• Automotive operating temperature: –40°C to +125°C

• AEC-Q100 Grade 1 compliant

• 8-pin small outline integrated circuit (SOIC) package

• Restriction of hazardous substances (RoHS) compliant

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

page 1

002-35171 Rev. *A

2023-02-13

12 3 4 5 6 7...39

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