Datasheet > CY15B256J

CY15B256J

更新时间： 2024-11-19 01:17:03

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		/
页数	文件大小	规格书
21页	1098K
描述
256-Kbit (32K Ã 8) Automotive Serial (I2C) F-RAM

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CY15B256J 数据手册

CY15B256J

256-Kbit (32K × 8) Automotive Serial (I²C)

F-RAM

256-Kbit (32K

× 8) Automotive Serial (I²C) F-RAM

Features

Functional Description

The CY15B256J is a 256-Kbit nonvolatile memory employing an

advanced ferroelectric process. An F-RAM is nonvolatile and

performs reads and writes similar to a RAM. It provides reliable

data retention for 151 years while eliminating the complexities,

overhead, and system-level reliability problems caused by

EEPROM and other nonvolatile memories.

■ 256-Kbit ferroelectric random access memory (F-RAM)

logically organized as 32K × 8

❐ High-endurance 100 trillion (10¹⁴) read/writes

❐ 151-year data retention (See Data Retention and Endurance

on page 13)

❐ NoDelay™ writes

Unlike EEPROM, the CY15B256J performs write operations at

bus speed. No write delays are incurred. Data is written to the

memory array immediately after each byte is successfully

transferred to the device. The next bus cycle can commence

without the need for data polling. In addition, the product offers

substantial write endurance compared with other nonvolatile

memories. F-RAM also exhibits much lower power during writes

than EEPROM because write operations do not require an

internally elevated power supply voltage for write circuits. The

CY15B256J is capable of supporting 10¹⁴read/write cycles, or

100 million times more write cycles than EEPROM.

❐ Advanced high-reliability ferroelectric process

■ Fast two-wire serial interface (I²C)

❐ Up to 3.4-MHz frequency^[1]

❐ Direct hardware replacement for serial EEPROM

❐ Supports legacy timings for 100 kHz and 400 kHz

■ Device ID

❐ Manufacturer ID and Product ID

■ Low-power consumption

❐ 175 A active current at 100 kHz

❐ 150 A standby current

These capabilities make the CY15B256J ideal for nonvolatile

memory applications, requiring frequent or rapid writes.

Examples range from data logging, where the number of write

cycles may be critical, to demanding industrial controls where the

long write time of EEPROM can cause data loss. The

combination of features allows more frequent data writing with

less overhead for the system.

❐ 8 A sleep mode current

■ Low-voltage operation: V_DD= 2.0 V to 3.6 V

■ Automotive-A temperature: –40 C to +85 C

■ 8-pin small outline integrated circuit (SOIC) package

■ Restriction of hazardous substances (RoHS) compliant

The CY15B256J provides substantial benefits to users of serial

EEPROM as a hardware drop-in replacement. The device

incorporates a read-only Device ID that allows the host to

determine the manufacturer, product density, and product

revision. The device specifications are guaranteed over an

Automotive-A temperature range of –40 C to +85 C.

For a complete list of related documentation, click here.

Logic Block Diagram

32 K x 8

F-RAM Array

Address

Latch

Counter

Serial to Parallel

SDA

Data Latch

Converter

SCL

Device ID and

Manufacturer ID

Control Logic

A0-A2

Note

1. The CY15B256J does not meet the NXP I C specification in the Fast-mode Plus (Fm+, 1 MHz) for I and in the High Speed Mode (Hs-mode, 3.4 MHz) for V

hys

Refer to DC Electrical Characteristics on page 12 for more details.

Cypress Semiconductor Corporation

Document Number: 001-90843 Rev. *I

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised February 28, 2018

12 3 4 5 6 7...21

中文翻译

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与CY15B256J相关器件

型号	品牌	获取价格	描述	数据表
CY15B256J-SXA	CYPRESS	获取价格	Memory Circuit, 32KX8, CMOS, PDSO8, SOIC-8
CY15B256J-SXA	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15B256J-SXAT	CYPRESS	获取价格	256-Kbit (32K Ã 8) Automotive Serial (I2C) F
CY15B256J-SXAT	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15B256J-SXE	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15B256J-SXET	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15B256Q-SXE	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15B256Q-SXET	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15E004J-SXA	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15E004J-SXAT	INFINEON	获取价格	铁电存储器 (F-RAM)

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