Datasheet > CY15E016Q

CY15E016Q

更新时间： 2024-11-07 01:13:03

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		/
页数	文件大小	规格书
20页	613K
描述
16-Kbit (2K Ã 8) Serial (SPI) Automotive F-RAM

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CY15E016Q 数据手册

CY15E016Q

16-Kbit (2K × 8) Serial (SPI) Automotive

F-RAM

16-Kbit (2K

× 8) Serial (SPI) Automotive F-RAM

Features

Functional Description

■ 16-Kbit ferroelectric random access memory (F-RAM) logically

organized as 2K × 8

❐ High-endurance 10 trillion (10¹³) read/writes

❐ 121-year data retention (See the Data Retention and

Endurance table)

❐ NoDelay™ writes

❐ Advanced high-reliability ferroelectric process

The CY15E016Q is a 16-Kbit nonvolatile memory employing an

advanced ferroelectric process. A ferroelectric random access

memory or F-RAM is nonvolatile and performs reads and writes

similar to a RAM. It provides reliable data retention for 121 years

while eliminating the complexities, overhead, and system level

reliability problems caused by serial flash, EEPROM, and other

nonvolatile memories.

Unlike serial flash and EEPROM, the CY15E016Q performs

write operations at bus speed. No write delays are incurred. Data

is written to the memory array immediately after each byte is

successfully transferred to the device. The next bus cycle can

commence without the need for data polling. In addition, the

product offers substantial write endurance compared with other

nonvolatile memories. The CY15E016Q is capable of supporting

10¹³read/write cycles, or 10 million times more write cycles than

EEPROM.

■ Very fast serial peripheral interface (SPI)

❐ Up to 16 MHz frequency

❐ Direct hardware replacement for serial flash and EEPROM

❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)

■ Sophisticated write protection scheme

❐ Hardware protection using the Write Protect (WP) pin

❐ Software protection using Write Disable instruction

❐ Software block protection for 1/4, 1/2, or entire array

These capabilities make the CY15E016Q ideal for nonvolatile

memory applications requiring frequent or rapid writes.

Examples range from data collection, where the number of write

cycles may be critical, to demanding industrial controls where the

long write time of serial flash or EEPROM can cause data loss.

■ Low power consumption

❐ 300 μA active current at 1 MHz

❐ 10 μA (typ) standby current at +85 °C

■ Voltage operation: V_DD= 4.5 V to 5.5 V

■ Automotive-E temperature: –40 °C to +125 °C

■ 8-pin small outline integrated circuit (SOIC) package

■ AEC Q100 Grade 1 compliant

The CY15E016Q provides substantial benefits to users of serial

EEPROM or flash as a hardware drop-in replacement. The

CY15E016Q uses the high-speed SPI bus, which enhances the

high-speed write capability of F-RAM technology. The device

specifications are guaranteed over an automotive-e temperature

range of –40 °C to +125 °C.

■ Restriction of hazardous substances (RoHS) compliant

Logic Block Diagram

Instruction Decoder

HOLD

SCK

Clock Generator

Control Logic

Write Protect

2 K x 8

F-RAM Array

Instruction Register

Address Register

Counter

Data I/O Register

Nonvolatile Status

Cypress Semiconductor Corporation

Document Number: 002-10030 Rev. *B

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised April 5, 2017

12 3 4 5 6 7...20

中文翻译

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与CY15E016Q相关器件

型号	品牌	获取价格	描述	数据表
CY15E016Q-SXA	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15E016Q-SXAT	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15E016Q-SXE	CYPRESS	获取价格	16-Kbit (2K Ã 8) Serial (SPI) Automotive F-R
CY15E016Q-SXE	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15E016Q-SXET	CYPRESS	获取价格	16-Kbit (2K Ã 8) Serial (SPI) Automotive F-R
CY15E016Q-SXET	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15E064J-SXA	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15E064J-SXAT	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15E064J-SXE	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15E064J-SXET	INFINEON	获取价格	铁电存储器 (F-RAM)

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