CY15E004Q
4-Kbit (512 × 8) Serial (SPI) Automotive-A
F-RAM
4-Kbit (512
× 8) Serial (SPI) Automotive-A F-RAM
Features
Functional Description
■ 4-Kbit ferroelectric random access memory (F-RAM) logically
organized as 512 × 8
❐ High-endurance 100 trillion (1014) read/writes
❐ 151-year data retention (See the Data Retention and
Endurance table)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
The CY15E004Q is a 4-Kbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 151 years
while eliminating the complexities, overhead, and system level
reliability problems caused by serial flash, EEPROM, and other
nonvolatile memories.
■ Very fast serial peripheral interface (SPI)
❐ Up to 20 MHz frequency
❐ Direct hardware replacement for serial flash and EEPROM
❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Unlike serial flash and EEPROM, the CY15E004Q performs
write operations at bus speed. No write delays are incurred. Data
is written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared with other
nonvolatile memories. The CY15E004Q is capable of supporting
1014 read/write cycles, or 100 million times more write cycles
than EEPROM.
■ Sophisticated write protection scheme
❐ Hardware protection using the Write Protect (WP) pin
❐ Software protection using Write Disable instruction
❐ Software block protection for 1/4, 1/2, or entire array
These capabilities make the CY15E004Q ideal for nonvolatile
memory applications requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
■ Low power consumption
❐ 250 A active current at 1 MHz
❐ 4 A (typ) standby current
■ Voltage operation: VDD = 4.5 V to 5.5 V
■ Automotive-A temperature: –40 C to +85 C
■ 8-pin small outline integrated circuit (SOIC) package
■ Restriction of hazardous substances (RoHS) compliant
The CY15E004Q provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
CY15E004Q uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The device
specifications are guaranteed over an Automotive-a temperature
range of –40 C to +85 C.
Logic Block Diagram
WP
Instruction Decoder
CS
Clock Generator
Control Logic
HOLD
Write Protect
SCK
512 x 8
F-RAM Array
Instruction Register
9
8
Address Register
Counter
SI
SO
Data I/O Register
2
Nonvolatile Status
Register
Errata: The Write Enable Latch (WEL) bit in the Status Register of CY15E004Q part does not clear after executing the memory write (WRITE) operation at memory
location(s) from 0x100 to 0x1FF. For more information, see Errata on page 19. Details include errata trigger conditions, scope of impact, available workarounds, and
silicon revision applicability.
Cypress Semiconductor Corporation
Document Number: 002-10235 Rev. *B
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised May 10, 2017
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