Datasheet > CY15E004J-SXA

CY15E004J-SXA

更新时间： 2024-11-19 15:19:19

品牌	Logo	应用领域
英飞凌 - INFINEON		存储
页数	文件大小	规格书
17页	376K
描述
铁电存储器 (F-RAM)

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CY15E004J-SXA 数据手册

CY15E004J

4-Kbit (512 × 8) Serial (I²C) Automotive-A

F-RAM

4-Kbit (512

× 8) Serial (I²C) Automotive-A F-RAM

Features

Functional Description

The CY15E004J is a 4-Kbit nonvolatile memory employing an

advanced ferroelectric process. A ferroelectric random access

memory or F-RAM is nonvolatile and performs reads and writes

similar to a RAM. It provides reliable data retention for 151 years

while eliminating the complexities, overhead, and system-level

reliability problems caused by EEPROM and other nonvolatile

memories.

■ 4-Kbit ferroelectric random access memory (F-RAM) logically

organized as 512 × 8

❐ High-endurance 100 trillion (10¹⁴) read/writes

❐ 151-year data retention (See the Data Retention and

Endurance table)

❐ NoDelay™ writes

❐ Advanced high-reliability ferroelectric process

Unlike EEPROM, the CY15E004J performs write operations at

bus speed. No write delays are incurred. Data is written to the

memory array immediately after each byte is successfully

transferred to the device. The next bus cycle can commence

without the need for data polling. In addition, the product offers

substantial write endurance compared with other nonvolatile

memories. Also, F-RAM exhibits much lower power during writes

than EEPROM since write operations do not require an internally

elevated power supply voltage for write circuits. The CY15E004J

is capable of supporting 10¹⁴read/write cycles, or 100 million

times more write cycles than EEPROM.

■ Fast two-wire Serial interface (I²C)

❐ Up to 1-MHz frequency

❐ Direct hardware replacement for serial (I²C) EEPROM

❐ Supports legacy timings for 100 kHz and 400 kHz

■ Low power consumption

❐ 100 A active current at 100 kHz

❐ 4 A (typ) standby current

■ Voltage operation: V_DD= 4.5 V to 5.5 V

■ Automotive-A temperature: –40 C to +85 C

■ 8-pin small outline integrated circuit (SOIC) package

■ Restriction of hazardous substances (RoHS) compliant

These capabilities make the CY15E004J ideal for nonvolatile

memory applications, requiring frequent or rapid writes.

Examples range from data logging, where the number of write

cycles may be critical, to demanding industrial controls where the

long write time of EEPROM can cause data loss. The

combination of features allows more frequent data writing with

less overhead for the system.

The CY15E004J provides substantial benefits to users of serial

(I²C) EEPROM as a hardware drop-in replacement. The device

specifications are guaranteed over an automotive-a temperature

range of –40 C to +85 C.

Logic Block Diagram

512 x 8

F-RAM Array

Address

Counter

Latch

Serial to Parallel

SDA

Data Latch

Converter

SCL

Control Logic

A2-A1

Cypress Semiconductor Corporation

Document Number: 002-10222 Rev. *B

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised March 24, 2017

12 3 4 5 6 7...17

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与CY15E004J-SXA相关器件

型号	品牌	获取价格	描述	数据表
CY15E004J-SXAT	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15E004J-SXE	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15E004J-SXET	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15E004Q	CYPRESS	获取价格	4-Kbit (512 Ã 8) Serial (SPI) Automotive F-R
CY15E004Q-SXA	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15E004Q-SXAT	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15E004Q-SXE	CYPRESS	获取价格	4-Kbit (512 Ã 8) Serial (SPI) Automotive F-R
CY15E004Q-SXE	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15E004Q-SXET	CYPRESS	获取价格	4-Kbit (512 Ã 8) Serial (SPI) Automotive F-R
CY15E004Q-SXET	INFINEON	获取价格	铁电存储器 (F-RAM)

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