CY15B256J
256-Kbit (32K × 8) Automotive Serial (I2C)
F-RAM
256-Kbit (32K
× 8) Automotive Serial (I2C) F-RAM
Features
Functional Description
The CY15B256J is a 256-Kbit nonvolatile memory employing an
advanced ferroelectric process. An F-RAM is nonvolatile and
performs reads and writes similar to a RAM. It provides reliable
data retention for 151 years while eliminating the complexities,
overhead, and system-level reliability problems caused by
EEPROM and other nonvolatile memories.
■ 256-Kbit ferroelectric random access memory (F-RAM)
logically organized as 32K × 8
❐ High-endurance 100 trillion (1014) read/writes
❐ 151-year data retention (See Data Retention and Endurance
on page 13)
❐ NoDelay™ writes
Unlike EEPROM, the CY15B256J performs write operations at
bus speed. No write delays are incurred. Data is written to the
memory array immediately after each byte is successfully
transferred to the device. The next bus cycle can commence
without the need for data polling. In addition, the product offers
substantial write endurance compared with other nonvolatile
memories. F-RAM also exhibits much lower power during writes
than EEPROM because write operations do not require an
internally elevated power supply voltage for write circuits. The
CY15B256J is capable of supporting 1014 read/write cycles, or
100 million times more write cycles than EEPROM.
❐ Advanced high-reliability ferroelectric process
■ Fast two-wire serial interface (I2C)
❐ Up to 3.4-MHz frequency[1]
❐ Direct hardware replacement for serial EEPROM
❐ Supports legacy timings for 100 kHz and 400 kHz
■ Device ID
❐ Manufacturer ID and Product ID
■ Low-power consumption
❐ 175 A active current at 100 kHz
❐ 150 A standby current
These capabilities make the CY15B256J ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data logging, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of EEPROM can cause data loss. The
combination of features allows more frequent data writing with
less overhead for the system.
❐ 8 A sleep mode current
■ Low-voltage operation: VDD = 2.0 V to 3.6 V
■ Automotive-A temperature: –40 C to +85 C
■ 8-pin small outline integrated circuit (SOIC) package
■ Restriction of hazardous substances (RoHS) compliant
The CY15B256J provides substantial benefits to users of serial
EEPROM as a hardware drop-in replacement. The device
incorporates a read-only Device ID that allows the host to
determine the manufacturer, product density, and product
revision. The device specifications are guaranteed over an
Automotive-A temperature range of –40 C to +85 C.
For a complete list of related documentation, click here.
Logic Block Diagram
32 K x 8
F-RAM Array
Address
Latch
Counter
15
8
Serial to Parallel
SDA
Data Latch
8
Converter
8
SCL
Device ID and
Manufacturer ID
Control Logic
WP
A0-A2
Note
2
1. The CY15B256J does not meet the NXP I C specification in the Fast-mode Plus (Fm+, 1 MHz) for I and in the High Speed Mode (Hs-mode, 3.4 MHz) for V
.
OL
hys
Refer to DC Electrical Characteristics on page 12 for more details.
Cypress Semiconductor Corporation
Document Number: 001-90843 Rev. *I
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised February 28, 2018
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