Datasheet > CY15B116QN-40BKXAT

CY15B116QN-40BKXAT

更新时间： 2024-11-19 14:53:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
36页	338K
描述
16Mb 3.3V Automotive(A) 40MHz SPI EXCELON? F-RAM in 24-ball FBGA

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CY15B116QN, CY15V116QN

16Mb EXCELON™ Auto Ferroelectric RAM

(F-RAM)

Serial (SPI), 2048K × 8, 40 MHz, automotive grade 3

Features

• 16-Mbit ferroelectric random access memory (F-RAM) logically organized as 2048K × 8

- Virtually unlimited endurance 100 trillion (10¹⁴) read/writes

- 151-year data retention (see “Data retention and endurance” on page 24)

- Infineon instant non-volatile write technology

- Advanced high-reliability ferroelectric process

• Fast SPI

- Up to 40 MHz frequency

- Supports SPI Mode 0 (0, 0) and Mode 3 (1, 1)

• Sophisticated write protection scheme

- Hardware protection using the write protect (WP) pin

- Software protection using write disable (WRDI) instruction

- Software block protection for 1/4, 1/2, or entire array

• Device ID and serial number

- Manufacturer ID and product ID

- Unique device ID

- Serial number

• Dedicated 256-byte special sector F-RAM

- Dedicated special sector write and read

- Stored content can survive up to three standard reflow soldering cycles

• Low-power consumption

- 2.7 mA (typ) active current at 40 MHz

- 14 µA (typ) standby current

- 1.5 µA (typ) Deep Power-down mode current

- 0.1 µA (typ) Hibernate mode current

• Low-voltage operation

- CY15V116QN: V_DD= 1.71 V to 1.89 V

- CY15B116QN: V_DD= 1.8 V to 3.6 V

• Operating temperature: –40°C to +85°C

• AEC-Q100 Grade 3 compliant

• Package

- 24-ball fine pitch ball grid array (24-ball FBGA)

• Restriction of hazardous substances (RoHS) compliant

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

page 1

002-32742 Rev. *B

2022-09-01

12 3 4 5 6 7...36

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