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CY15B128Q PDF预览

CY15B128Q

更新时间: 2024-11-07 01:13:03
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
22页 2274K
描述
128-Kbit (16K × 8) Automotive Serial (SPI) F-RAM

CY15B128Q 数据手册

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CY15B128Q  
128-Kbit (16K × 8) Automotive Serial (SPI)  
F-RAM  
128-Kbit (16K  
× 8) Automotive Serial (SPI) F-RAM  
Features  
Functional Description  
128-Kbit ferroelectric random access memory (F-RAM)  
The CY15B128Q is a 128-Kbit nonvolatile memory employing an  
advanced ferroelectric process. An F-RAM is nonvolatile and  
performs reads and writes similar to a RAM. It provides reliable  
data retention for 151 years while eliminating the complexities,  
overhead, and system-level reliability problems caused by serial  
flash, EEPROM, and other nonvolatile memories.  
logically organized as 16K × 8  
High-endurance 100 trillion (1014) read/writes  
151-year data retention (See the Data Retention and  
Endurance table)  
NoDelay™ writes  
Advanced high-reliability ferroelectric process  
Unlike serial flash and EEPROM, the CY15B128Q performs  
write operations at bus speed. No write delays are incurred. Data  
is written to the memory array immediately after each byte is  
successfully transferred to the device. The next bus cycle can  
commence without the need for data polling. In addition, the  
product offers substantial write endurance compared with other  
nonvolatile memories. The CY15B128Q is capable of supporting  
1014 read/write cycles, or 100 million times more write cycles  
than EEPROM.  
Very fast serial peripheral interface (SPI)  
Up to 40-MHz frequency  
Direct hardware replacement for serial flash and EEPROM  
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)  
Sophisticated write-protection scheme  
Hardware protection using the Write Protect (WP) pin  
Software protection using Write Disable instruction  
Software block protection for 1/4, 1/2, or entire array  
Device ID  
Manufacturer ID and Product ID  
These capabilities make the CY15B128Q ideal for nonvolatile  
memory applications requiring frequent or rapid writes.  
Examples range from data logging, where the number of write  
cycles may be critical, to demanding industrial controls where the  
long write time of serial flash or EEPROM can cause data loss.  
Low power consumption  
2.5-mA active current at 40 MHz  
150-A standby current  
8-A sleep mode current  
The CY15B128Q provides substantial benefits to users of serial  
EEPROM or flash as a hardware drop-in replacement. The  
CY15B128Q uses the high-speed SPI bus, which enhances the  
high-speed write capability of F-RAM technology. The device  
incorporates a read-only Device ID that allows the host to  
determine the manufacturer, product density, and product  
revision. The device specifications are guaranteed over an  
automotive-A range of –40 C to +85 C.  
Low-voltage operation: VDD = 2.0 V to 3.6 V  
Automotive-A temperature: –40 C to +85 C  
8-pin small outline integrated circuit (SOIC) package  
Restriction of hazardous substances (RoHS) compliant  
For a complete list of related documentation, click here.  
Logic Block Diagram  
WP  
Instruction Decoder  
CS  
HOLD  
SCK  
Clock Generator  
Control Logic  
Write Protect  
16 K x 8  
F-RAM Array  
Instruction Register  
14  
8
Address Register  
Counter  
SI  
SO  
Data I/O Register  
3
Nonvolatile Status  
Register  
Cypress Semiconductor Corporation  
Document Number: 001-90888 Rev. *F  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised September 28, 2016  

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