Datasheet > CY15B116QSN-108BKXIT

CY15B116QSN-108BKXIT

更新时间： 2024-09-16 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
113页	1077K
描述
16Mb 3.0V Industrial 108MHz QSPI EXCELON? F-RAM in 24-ball FBGA

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CY15B116QSN-108BKXIT 数据手册

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CY15B116QSN, CY15V116QSN

16Mb EXCELON™ Ultra Ferroelectric RAM (F-RAM)

Serial (Quad SPI), 2048K × 8, 108MHz, industrial

Features

• 16-Mb ferroelectric random access memory (F-RAM) logically organized as 2048K  8

- Virtually unlimited endurance of 100 trillion (10¹⁴) read/write cycles

- 151-year data retention (see “Data retention and endurance” on page 96)

- Infineon instant non-volatile write technology

- Advanced high-reliability ferroelectric process

• Single and multi I/O serial peripheral interface (SPI)

- Serial bus interface SPI protocols

- Supports SPI mode 0 (0, 0) and mode 3 (1, 1) for all SDR mode transfers

- Supports SPI mode 0 (0, 0) for all DDR mode transfers

- Extended I/O SPI protocols

- Dual SPI (DPI) protocols

- Quad SPI (QPI) protocols

• SPI clock frequency

- Up to 108 MHz frequency SPI single data rate (SDR)

- Up to 46 MHz frequency SPI double data rate (DDR)

• eXecute-In-Place (XIP) for memory read/write

• Write protection, data security, and data integrity

• Hardware protection using the write protect (WP) pin

• Software block protection

• Embedded error correction code (ECC) and cyclic redundancy check (CRC) for enhanced data integrity

- ECC detects and corrects 2-bit error. If a 3-bit error occurs, it does not correct but reports through the ECC

Status Register

- CRC detects any accidental change to raw data

• Extended electronic signatures

- Device ID includes manufacturer ID and product ID

- Unique ID

- User programmable serial number

• Dedicated 256-byte special sector F-RAM

- Dedicated special sector write and read

- Content can survive up to three standard reflow cycles

• Low-power consumption at high speed

- 14 mA (typ) active current for 108 MHz SPI SDR

- 22 mA (typ) active current for 108 MHz QSPI SDR

- 16.5 mA (typ) active current for 46 MHz QSPI DDR

- 115 µA (typ) standby current

- 1.1 µA (typ) deep power-down mode current

- 0.1 µA (typ) Hibernate mode current

• Low-voltage operation

- CY15V116QSN: V_DD= 1.71 V to 1.89 V

- CY15B116QSN: V_DD= 1.8 V to 3.6 V

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

page 1 of 113

002-26981 Rev. *F

2022-05-25

12 3 4 5 6 7...113

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