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CY15B108QN-50BKXQ PDF预览

CY15B108QN-50BKXQ

更新时间: 2024-11-22 11:10:59
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
36页 354K
描述
8Mb 3.3V Industrial(Q) 50MHz SPI EXCELON™ F-RAM in 24-ball FBGA

CY15B108QN-50BKXQ 数据手册

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CY15B108QN, CY15V108QN  
8Mb EXCELON™ LP Ferroelectric RAM  
(F-RAM)  
Serial (SPI), 1024K × 8, 50 MHz, extended industrial  
Features  
8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8  
- Virtually unlimited endurance 100 trillion (1014) read/writes  
- 151-year data retention (see “Data retention and endurance” on page 24)  
- Infineon instant non-volatile write technology  
- Advanced high-reliability ferroelectric process  
Fast SPI (FSPI)  
- Up to 50 MHz frequency  
- Supports SPI Mode 0 (0, 0) and Mode 3 (1, 1)  
Sophisticated write protection scheme  
- Hardware protection using the write protect (WP) pin  
- Software protection using write disable (WRDI) instruction  
- Software block protection for 1/4, 1/2, or entire array  
Device ID and serial number  
- Manufacturer ID and product ID  
- Unique device ID  
- Serial number  
Dedicated 256-byte special sector F-RAM  
- Dedicated special sector write and read  
- Stored content can survive up to three standard reflow soldering cycles  
Low-power consumption  
- 5.5 mA (typ) active current at 50 MHz  
- 9 µA (typ) standby current  
- 1.10 µA (typ) Deep Power-down mode current  
- 0.1 µA (typ) Hibernate mode current  
Low-voltage operation  
- CY15V108QN: VDD = 1.71 V to 1.89 V  
- CY15B108QN: VDD = 1.8 V to 3.6 V  
Operating temperature  
- Extended industrial (Q): -40°C to +105°C  
Package  
- 24-ball fine pitch ball grid array (24-ball FBGA)  
Restriction of hazardous substances (RoHS) compliant  
Datasheet  
www.infineon.com  
Please read the Important Notice and Warnings at the end of this document  
page1  
002-32520 Rev. *B  
2022-09-01  

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