Datasheet > CY15B116QI-20BKXCT

CY15B116QI-20BKXCT

更新时间： 2024-09-20 14:52:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
39页	364K
描述
16Mb 3.3V Commercial 20MHz SPI EXCELON? F-RAM in 24-ball FBGA with Inrush current control

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CY15B116QI, CY15V116QI

16Mb EXCELON™ LP Ferroelectric RAM

(F-RAM)

Serial (SPI), 2048K × 8, 20MHz, inrush current control, commercial

Features

• 16-Mb ferroelectric random access memory (F-RAM) logically organized as 2048K × 8

- Virtually unlimited endurance 1000 trillion (10¹⁵) read/writes

- 151-year data retention (see “Data retention and endurance” on page 27)

- Infineon instant non-volatile write technology

- Advanced high-reliability ferroelectric process

• Fast serial peripheral interface (SPI)

- Up to 20 MHz frequency

- Supports SPI mode 0 (0, 0) and mode 3 (1, 1)

• Sophisticated write protection scheme

- Hardware protection using the Write Protect (WP) pin

- Software protection using Write Disable (WRDI) instruction

- Software block protection for 1/4, 1/2, or entire array

• Device ID and serial number

- Manufacturer ID and Product ID

- Unique device ID

- Serial number

• Dedicated 256-byte special sector F-RAM

- Dedicated special sector write and read

- Stored content can survive up to three standard reflow soldering cycles

• Low-power consumption

- 1.50 mA (typ) active current at 20 MHz

- 14 µA (typ) standby current

- 1.10 µA (typ) Deep Power Down mode current

- 0.1 µA (typ) Hibernate mode current

- 1.90 mA (typ) Inrush current during power up

• Low-voltage operation

- CY15V116QI: V_DD= 1.71 V to 1.89 V

- CY15B116QI: V_DD= 1.8 V to 3.6 V

• Commercial operating temperature: 0 °C to +70 °C

• 24-ball fine pitch ball grid array (24-ball FBGA)

• Restriction of hazardous substances (RoHS) compliant

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

page 1 of 39

002-30283 Rev. *C

2022-05-25

12 3 4 5 6 7...39

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