5秒后页面跳转
CY15B102N-ZS60XA PDF预览

CY15B102N-ZS60XA

更新时间: 2024-10-29 15:19:07
品牌 Logo 应用领域
英飞凌 - INFINEON 存储
页数 文件大小 规格书
22页 498K
描述
铁电存储器 (F-RAM)

CY15B102N-ZS60XA 数据手册

 浏览型号CY15B102N-ZS60XA的Datasheet PDF文件第2页浏览型号CY15B102N-ZS60XA的Datasheet PDF文件第3页浏览型号CY15B102N-ZS60XA的Datasheet PDF文件第4页浏览型号CY15B102N-ZS60XA的Datasheet PDF文件第5页浏览型号CY15B102N-ZS60XA的Datasheet PDF文件第6页浏览型号CY15B102N-ZS60XA的Datasheet PDF文件第7页 
CY15B102N  
2-Mbit (128K × 16) Automotive F-RAM  
Memory  
2-Mbit (128K  
× 16) Automotive F-RAM Memory  
Automotive-A temperature: –40 C to +85 C  
44-pin thin small outline package (TSOP) Type II  
Features  
2-Mbit ferroelectric random access memory (F-RAM™)  
logically organized as 128K × 16  
Restriction of hazardous substances (RoHS)-compliant  
Configurable as 256K × 8 using UB and LB  
High-endurance 100 trillion (1014) read/writes  
Functional Description  
151-year data retention (see the Data Retention and  
Endurance table)  
NoDelay™ writes  
Page-mode operation for 30-ns cycle time  
Advanced high-reliability ferroelectric process  
The CY15B102N is a 128K × 16 nonvolatile memory that reads  
and writes similar to a standard SRAM. A ferroelectric random  
access memory or F-RAM is nonvolatile, which means that data  
is retained after power is removed. It provides data retention for  
over 151 years while eliminating the reliability concerns,  
functional disadvantages, and system design complexities of  
battery-backed SRAM (BBSRAM). Fast write-timing and high  
write-endurance make the F-RAM superior to other types of  
memory.  
SRAM compatible  
Industry-standard 128K × 16 SRAM pinout  
60-ns access time, 90-ns cycle time  
Advanced features  
Software-programmable block write-protect  
The CY15B102N operation is similar to that of other RAM  
devices, and, therefore, it can be used as a drop-in replacement  
for a standard SRAM in a system. Read cycles may be triggered  
by CE or simply by changing the address and write cycles may  
be triggered by CE or WE. The F-RAM memory is nonvolatile  
due to its unique ferroelectric memory process. These features  
make the CY15B102N ideal for nonvolatile memory applications  
requiring frequent or rapid writes.  
Superior to battery-backed SRAM modules  
No battery concerns  
Monolithic reliability  
True surface-mount solution, no rework steps  
Superior for moisture, shock, and vibration  
Low power consumption  
Active current 7 mA (typ)  
Standby current 120 A (typ)  
The device is available in  
surface-mount package. Device specifications are guaranteed  
over the Automotive-A temperature range –40 °C to +85 °C.  
a 400-mil, 44-pin TSOP-II  
For a complete list of related resources, click here.  
Low-voltage operation: VDD = 2.0 V to 3.6 V  
Logic Block Diagram  
16 K x 16 block  
16 K x 16 block  
16 K x 16 block  
16 K x 16 block  
16 K x 16 block  
16 K x 16 block  
16 K x 16 block  
16 K x 16 block  
A
16-2  
A
16-0  
A
1-0  
. . .  
CE  
Column Decoder  
WE  
DQ  
15-0  
Control  
UB, LB  
I/O Latch & Bus Driver  
Logic  
OE  
ZZ  
Cypress Semiconductor Corporation  
Document Number: 001-93140 Rev. *D  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised November 23, 2017  

与CY15B102N-ZS60XA相关器件

型号 品牌 获取价格 描述 数据表
CY15B102N-ZS60XAT CYPRESS

获取价格

2-Mbit (128K × 16) Automotive F-RAM Memory
CY15B102N-ZS60XAT INFINEON

获取价格

铁电存储器 (F-RAM)
CY15B102N-ZS60XE INFINEON

获取价格

铁电存储器 (F-RAM)
CY15B102N-ZS60XET INFINEON

获取价格

铁电存储器 (F-RAM)
CY15B102Q CYPRESS

获取价格

2-Mbit (256 K × 8) Serial (SPI) Automotive F
CY15B102QM-50SWXI INFINEON

获取价格

2Mb 3.3V Industrial 50MHz SPI EXCELON™ F-RAM
CY15B102QM-50SWXIT INFINEON

获取价格

2Mb 3.3V Industrial 50MHz SPI EXCELON™ F-RAM
CY15B102QN-50LHXI INFINEON

获取价格

2Mb 3.3V Industrial 50MHz SPI EXCELON? F-RAM in 8-lead DFN
CY15B102QN-50LHXIT INFINEON

获取价格

2Mb 3.3V Industrial 50MHz SPI EXCELON? F-RAM in 8-lead DFN
CY15B102QN-50PZXI INFINEON

获取价格

2Mb 3.3V Industrial 50MHz SPI EXCELON? F-RAM in 8-pin DIP