CY15B102QN, CY15V102QN
2Mb EXCELON™ LP Ferroelectric RAM
(F-RAM)
Serial (SPI), 256K × 8, 40 MHz, industrial
Features
• 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8
- Virtually unlimited endurance of 1000 trillion (1015) read/write cycles
- 151-year data retention (See “Data retention and endurance” on page 25)
- Infineon instant non-volatile write technology
- Advanced high-reliability ferroelectric process
• Fast SPI
- Up to 50 MHz frequency
- Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
• Sophisticated write protection scheme
- Hardware protection using the write protect (WP) pin
- Software protection using write disable (WRDI) instruction
- Software block protection for 1/4, 1/2, or entire array
• Device ID and serial number
- Device ID contains manufacturer ID and product ID
- Unique ID
- Serial number
• Dedicated 256-byte special sector F-RAM
- Dedicated special sector write and read
- Stored content can survive up to three standard reflow soldering cycles
• Low-power consumption
- 2.4 mA (typ) active current at 40 MHz
- 2.3 µA (typ) standby current
- 0.70 µA (typ) deep power down mode current
- 0.1 µA (typ) hibernate mode current
• Low-voltage operation
- CY15V102QN: VDD = 1.71 V to 1.89 V
- CY15B102QN: VDD = 1.8 V to 3.6 V
• Industrial operating temperature: –40°C to +85°C
• Packages
- 8-pin small outline integrated circuit (SOIC) package
- 8-pin thin dual flat no leads (DFN) package
- 8-pin plastic dual in-line (PDIP) package
• Restriction of hazardous substances (RoHS) compliant
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
page 1
002-26764 Rev. *D
2022-09-12