CY15B104Q
4-Mbit (512 K × 8) Serial (SPI) F-RAM
4-Mbit (512
K × 8) Serial (SPI) F-RAM
Features
Functional Description
■ 4-Mbit ferroelectric random access memory (F-RAM) logically
organized as 512 K × 8
❐ High-endurance 100 trillion (1014) read/writes
❐ 151-year data retention (See the Data Retention and
Endurance table)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
The CY15B104Q is a 4-Mbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 151 years
while eliminating the complexities, overhead, and system-level
reliability problems caused by serial flash, EEPROM, and other
nonvolatile memories.
Unlike serial flash and EEPROM, the CY15B104Q performs
write operations at bus speed. No write delays are incurred. Data
is written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared to other
nonvolatile memories. The CY15B104Q is capable of supporting
1014 read/write cycles, or 100 million times more write cycles
than EEPROM.
■ Very fast serial peripheral interface (SPI)
❐ Up to 40-MHz frequency
❐ Direct hardware replacement for serial flash and EEPROM
❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
■ Sophisticated write protection scheme
❐ Hardware protection using the Write Protect (WP) pin
❐ Software protection using Write Disable instruction
❐ Software block protection for 1/4, 1/2, or entire array
These capabilities make the CY15B104Q ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
■ Device ID
❐ Manufacturer ID and Product ID
■ Low power consumption
❐ 300 A active current at 1 MHz
❐ 100 A (typ) standby current
❐ 3 A (typ) sleep mode current
The CY15B104Q provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
CY15B104Q uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The device
incorporates a read-only Device ID that allows the host to
determine the manufacturer, product density, and product
revision. The device specifications are guaranteed over an
industrial temperature range of –40 C to +85 C.
■ Low-voltage operation: VDD = 2.0 V to 3.6 V
■ Industrial temperature: –40 C to +85 C
■ Packages
❐ 8-pin small outline integrated circuit (SOIC) package
❐ 8-pin thin dual flat no leads (TDFN) package
For a complete list of related documentation, click here.
■ Restriction of hazardous substances (RoHS) compliant
Logic Block Diagram
WP
Instruction Decoder
CS
HOLD
SCK
Clock Generator
Control Logic
Write Protect
512 K x 8
F-RAM Array
Instruction Register
19
8
Address Register
Counter
SI
SO
Data I/O Register
3
Nonvolatile Status
Register
Cypress Semiconductor Corporation
Document Number: 001-94240 Rev. *E
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised November 9, 2017
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