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CY15B104Q-LHXI PDF预览

CY15B104Q-LHXI

更新时间: 2024-11-18 15:18:07
品牌 Logo 应用领域
英飞凌 - INFINEON 存储
页数 文件大小 规格书
22页 828K
描述
铁电存储器 (F-RAM)

CY15B104Q-LHXI 数据手册

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CY15B104Q  
4-Mbit (512 K × 8) Serial (SPI) F-RAM  
4-Mbit (512  
K × 8) Serial (SPI) F-RAM  
Features  
Functional Description  
4-Mbit ferroelectric random access memory (F-RAM) logically  
organized as 512 K × 8  
High-endurance 100 trillion (1014) read/writes  
151-year data retention (See the Data Retention and  
Endurance table)  
NoDelay™ writes  
Advanced high-reliability ferroelectric process  
The CY15B104Q is a 4-Mbit nonvolatile memory employing an  
advanced ferroelectric process. A ferroelectric random access  
memory or F-RAM is nonvolatile and performs reads and writes  
similar to a RAM. It provides reliable data retention for 151 years  
while eliminating the complexities, overhead, and system-level  
reliability problems caused by serial flash, EEPROM, and other  
nonvolatile memories.  
Unlike serial flash and EEPROM, the CY15B104Q performs  
write operations at bus speed. No write delays are incurred. Data  
is written to the memory array immediately after each byte is  
successfully transferred to the device. The next bus cycle can  
commence without the need for data polling. In addition, the  
product offers substantial write endurance compared to other  
nonvolatile memories. The CY15B104Q is capable of supporting  
1014 read/write cycles, or 100 million times more write cycles  
than EEPROM.  
Very fast serial peripheral interface (SPI)  
Up to 40-MHz frequency  
Direct hardware replacement for serial flash and EEPROM  
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)  
Sophisticated write protection scheme  
Hardware protection using the Write Protect (WP) pin  
Software protection using Write Disable instruction  
Software block protection for 1/4, 1/2, or entire array  
These capabilities make the CY15B104Q ideal for nonvolatile  
memory applications, requiring frequent or rapid writes.  
Examples range from data collection, where the number of write  
cycles may be critical, to demanding industrial controls where the  
long write time of serial flash or EEPROM can cause data loss.  
Device ID  
Manufacturer ID and Product ID  
Low power consumption  
300 A active current at 1 MHz  
100 A (typ) standby current  
3 A (typ) sleep mode current  
The CY15B104Q provides substantial benefits to users of serial  
EEPROM or flash as a hardware drop-in replacement. The  
CY15B104Q uses the high-speed SPI bus, which enhances the  
high-speed write capability of F-RAM technology. The device  
incorporates a read-only Device ID that allows the host to  
determine the manufacturer, product density, and product  
revision. The device specifications are guaranteed over an  
industrial temperature range of –40 C to +85 C.  
Low-voltage operation: VDD = 2.0 V to 3.6 V  
Industrial temperature: –40 C to +85 C  
Packages  
8-pin small outline integrated circuit (SOIC) package  
8-pin thin dual flat no leads (TDFN) package  
For a complete list of related documentation, click here.  
Restriction of hazardous substances (RoHS) compliant  
Logic Block Diagram  
WP  
Instruction Decoder  
CS  
HOLD  
SCK  
Clock Generator  
Control Logic  
Write Protect  
512 K x 8  
F-RAM Array  
Instruction Register  
19  
8
Address Register  
Counter  
SI  
SO  
Data I/O Register  
3
Nonvolatile Status  
Register  
Cypress Semiconductor Corporation  
Document Number: 001-94240 Rev. *E  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised November 9, 2017  

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