Datasheet > CY15B102Q-SXE

CY15B102Q-SXE

更新时间： 2024-11-25 15:19:19

品牌	Logo	应用领域
英飞凌 - INFINEON		存储
页数	文件大小	规格书
22页	1440K
描述
铁电存储器 (F-RAM)

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CY15B102Q-SXE 数据手册

CY15B102Q

2-Mbit (256 K × 8) Serial (SPI) Automotive

F-RAM

2-Mbit (256

K × 8) Serial (SPI) Automotive F-RAM

Features

Functional Overview

■ 2-Mbit ferroelectric random access memory (F-RAM) logically

organized as 256 K × 8

❐ High-endurance 10 trillion (10¹³) read/writes

❐ 121-year data retention (See the Data Retention and

Endurance table)

❐ NoDelay™ writes

The CY15B102Q is a 2-Mbit nonvolatile memory employing an

advanced ferroelectric process. F-RAM is nonvolatile and

performs reads and writes similar to a RAM. It provides reliable

data retention for 121 years while eliminating the complexities,

overhead, and system-level reliability problems caused by serial

flash, EEPROM, and other nonvolatile memories.

❐ Advanced high-reliability ferroelectric process

Unlike serial flash and EEPROM, the CY15B102Q performs

write operations at bus speed. No write delays are incurred. Data

is written to the memory array immediately after each byte is

successfully transferred to the device. The next bus cycle can

commence without the need for data polling. In addition, the

product offers substantial write endurance compared with other

nonvolatile memories. The CY15B102Q is capable of supporting

10¹³read/write cycles, or 10 million times more write cycles than

EEPROM.

■ Very fast serial peripheral interface (SPI)

❐ Up to 25 MHz frequency

❐ Direct hardware replacement for serial flash and EEPROM

❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)

■ Sophisticated write protection scheme

❐ Hardware protection using the Write Protect (WP) pin

❐ Software protection using Write Disable instruction

❐ Software block protection for 1/4, 1/2, or entire array

These capabilities make the CY15B102Q ideal for nonvolatile

memory applications requiring frequent or rapid writes.

Examples range from data collection, where the number of write

cycles may be critical, to demanding industrial controls where the

long write time of serial flash or EEPROM can cause data loss.

■ Device ID

❐ Manufacturer ID and Product ID

■ Low power consumption

❐ 5 mA active current at 25 MHz

❐ 750 A standby current

The CY15B102Q provides substantial benefits to users of serial

EEPROM or flash as a hardware drop-in replacement. The

CY15B102Q uses the high-speed SPI bus, which enhances the

high-speed write capability of F-RAM technology. The device

incorporates a read-only Device ID that allows the host to

determine the manufacturer, product density, and product

revision. The device specifications are guaranteed over an

Automotive-E temperature range of –40 C to +125 C.

❐ 20 A sleep mode current

■ Low-voltage operation: V_DD= 2.0 V to 3.6 V

■ Automotive-E temperature: –40 C to +125 C

■ 8-pin small outline integrated circuit (SOIC) package

■ AEC Q100 Grade 1 compliant

■ Restriction of hazardous substances (RoHS) compliant

Logic Block Diagram

Instruction Decoder

HOLD

SCK

Clock Generator

Control Logic

Write Protect

256 K x 8

F-RAM Array

Instruction Register

Address Register

Counter

Data I/O Register

Nonvolatile Status

Cypress Semiconductor Corporation

Document Number: 001-89166 Rev. *F

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised April 20, 2017

12 3 4 5 6 7...22

中文翻译

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与CY15B102Q-SXE相关器件

型号	品牌	获取价格	描述	数据表
CY15B102Q-SXET	CYPRESS	获取价格	2-Mbit (256 K Ã 8) Serial (SPI) Automotive F
CY15B102Q-SXET	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15B102Q-SXM	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15B104QI-20LPXC	INFINEON	获取价格	4Mb 3.3V Commercial 20MHz SPI EXCELON? F-RAM in 8-pin GQFN with Inrush current control
CY15B104QI-20LPXCT	INFINEON	获取价格	4Mb 3.3V Commercial 20MHz SPI EXCELON? F-RAM in 8-pin GQFN with Inrush current control
CY15B104QI-20LPXI	INFINEON	获取价格	4Mb 3.3V Industrial 20MHz SPI EXCELON? F-RAM in 8-pin GQFN with Inrush current control
CY15B104QI-20LPXIT	INFINEON	获取价格	4Mb 3.3V Industrial 20MHz SPI EXCELON? F-RAM in 8-pin GQFN with Inrush current control
CY15B104Q-LHXI	CYPRESS	获取价格	Memory Circuit, 512KX8, CMOS, PDSO8, TDFN-8
CY15B104Q-LHXI	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15B104Q-LHXIT	CYPRESS	获取价格	Memory Circuit, 512KX8, CMOS, PDSO8, TDFN-8

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