Datasheet > CY15B104QSN-108SXIT

CY15B104QSN-108SXIT

更新时间： 2024-11-21 14:50:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
122页	1087K
描述
4Mb 3.0V Industrial 108MHz QSPI EXCELON? F-RAM in 8-pin SOIC

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数据手册

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CY15B104QSN, CY15V104QSN

4Mb EXCELON™ Ultra Ferroelectric RAM

(F-RAM)

Serial (quad SPI), 512K × 8, 108 MHz, industrial

Features

• 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512K × 8

- Virtually unlimited endurance of 100 trillion (10¹⁴) read/write cycles

- 151-year data retention (see “Data retention and endurance” on page 101)

- Infineon instant non-volatile write technology

- Advanced high-reliability ferroelectric process

• Single and multi I/O serial peripheral interface (SPI)

- Serial bus interface SPI protocols

- Supports SPI mode 0 (0, 0) and mode 3 (1, 1) for all SDR mode transfers

- Supports SPI mode 0 (0, 0) for all DDR mode transfers

- Extended I/O SPI protocols

- Dual SPI (DPI) protocols

- Quad SPI (QPI) protocols

• SPI clock frequency

- Up to 108-MHz frequency SPI single data rate (SDR)

- Up to 54-MHz frequency SPI double data rate (DDR)

• Execute-in-place (XIP) for memory read/write

• Write protection, data security, and data integrity

• Hardware protection using the write protect (WP) pin

• Software block protection

• Embedded error correction code (ECC) and cyclic redundancy check (CRC) for enhanced data integrity

- ECC detects and corrects 1-bit error. If a 2-bit error occurs, it does not correct but reports through the ECC

status register

- CRC detects any accidental change to raw data

• Extended electronic signatures

- Device ID includes manufacturer ID and product ID

- Unique ID

- User programmable Serial Number

• Dedicated 256-byte special sector F-RAM

- Dedicated special sector write and read

- Content can survive up to three standard reflow cycles

• Low-power consumption at high speed

- 10 mA (typ) active current for 108 MHz SPI SDR

- 16 mA (typ) active current for 108 MHz QSPI SDR and 54-MHz QSPI DDR

- 110 µA (typ) standby current

- 0.80 µA (typ) deep power down mode current

- 0.1 µA (typ) hibernate mode current

• Low-voltage operation:

- CY15V104QSN: V_DD= 1.71 V to 1.89 V

- CY15B104QSN: V_DD= 1.8 V to 3.6 V

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

page 1

002-18293 Rev. *M

2023-06-02

12 3 4 5 6 7...122

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与CY15B104QSN-108SXIT相关器件

型号	品牌	获取价格	描述	数据表
CY15B104Q-SXI	CYPRESS	获取价格	Memory Circuit, 512KX8, CMOS, PDSO8, SOIC-8
CY15B108QI-20LPXC	INFINEON	获取价格	8Mb 3.3V Commercial 20MHz SPI EXCELON? F-RAM in 8-pin GQFN with Inrush current control
CY15B108QI-20LPXCT	INFINEON	获取价格	8Mb 3.3V Commercial 20MHz SPI EXCELON? F-RAM in 8-pin GQFN with Inrush current control
CY15B108QI-20LPXI	INFINEON	获取价格	8Mb 3.3V Industrial 20MHz SPI EXCELON? F-RAM in 8-pin GQFN with Inrush current control
CY15B108QI-20LPXIT	INFINEON	获取价格	8Mb 3.3V Industrial 20MHz SPI EXCELON? F-RAM in 8-pin GQFN with Inrush current control
CY15B108QN-20LPXC	INFINEON	获取价格	8Mb 3.3V Commercial 20MHz SPI EXCELON™ F-RAM
CY15B108QN-20LPXCT	INFINEON	获取价格	8Mb 3.3V Commercial 20MHz SPI EXCELON™ F-RAM
CY15B108QN-20LPXI	INFINEON	获取价格	8Mb 3.3V Industrial 20MHz SPI EXCELON™ F-RAM
CY15B108QN-20LPXIT	INFINEON	获取价格	8Mb 3.3V Industrial 20MHz SPI EXCELON™ F-RAM
CY15B108QN-40LPXI	CYPRESS	获取价格	Memory Circuit,

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