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CY15B104Q-LHXIT PDF预览

CY15B104Q-LHXIT

更新时间： 2024-11-18 21:05:35
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 光电二极管内存集成电路
页数 文件大小 规格书
22页 841K
描述
Memory Circuit, 512KX8, CMOS, PDSO8, TDFN-8

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中文翻译

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CY15B104Q-LHXIT 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：HVSON,Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.71
风险等级：1.54JESD-30 代码：R-PDSO-N8
长度：6 mm内存密度：4194304 bit
内存集成电路类型：MEMORY CIRCUIT内存宽度：8
湿度敏感等级：3功能数量：1
端子数量：8字数：524288 words
字数代码：512000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：512KX8封装主体材料：PLASTIC/EPOXY
封装代码：HVSON封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度（摄氏度）：260
座面最大高度：0.8 mm最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Pure Tin (Sn)
端子形式：NO LEAD端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：30
宽度：5 mmBase Number Matches：1

CY15B104Q-LHXIT 数据手册

 浏览型号CY15B104Q-LHXIT的Datasheet PDF文件第2页浏览型号CY15B104Q-LHXIT的Datasheet PDF文件第3页浏览型号CY15B104Q-LHXIT的Datasheet PDF文件第4页浏览型号CY15B104Q-LHXIT的Datasheet PDF文件第5页浏览型号CY15B104Q-LHXIT的Datasheet PDF文件第6页浏览型号CY15B104Q-LHXIT的Datasheet PDF文件第7页 
CY15B104Q  
4-Mbit (512 K × 8) Serial (SPI) F-RAM  
4-Mbit (512  
K × 8) Serial (SPI) F-RAM  
Features  
Functional Description  
■ 4-Mbit ferroelectric random access memory (F-RAM) logically  
organized as 512 K × 8  
❐ High-endurance 100 trillion (1014) read/writes  
❐ 151-year data retention (See the Data Retention and  
Endurance table)  
❐ NoDelay™ writes  
❐ Advanced high-reliability ferroelectric process  
The CY15B104Q is a 4-Mbit nonvolatile memory employing an  
advanced ferroelectric process. A ferroelectric random access  
memory or F-RAM is nonvolatile and performs reads and writes  
similar to a RAM. It provides reliable data retention for 151 years  
while eliminating the complexities, overhead, and system-level  
reliability problems caused by serial flash, EEPROM, and other  
nonvolatile memories.  
Unlike serial flash and EEPROM, the CY15B104Q performs  
write operations at bus speed. No write delays are incurred. Data  
is written to the memory array immediately after each byte is  
successfully transferred to the device. The next bus cycle can  
commence without the need for data polling. In addition, the  
product offers substantial write endurance compared to other  
nonvolatile memories. The CY15B104Q is capable of supporting  
1014 read/write cycles, or 100 million times more write cycles  
than EEPROM.  
■ Very fast serial peripheral interface (SPI)  
❐ Up to 40-MHz frequency  
❐ Direct hardware replacement for serial flash and EEPROM  
❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)  
■ Sophisticated write protection scheme  
❐ Hardware protection using the Write Protect (WP) pin  
❐ Software protection using Write Disable instruction  
❐ Software block protection for 1/4, 1/2, or entire array  
These capabilities make the CY15B104Q ideal for nonvolatile  
memory applications, requiring frequent or rapid writes.  
Examples range from data collection, where the number of write  
cycles may be critical, to demanding industrial controls where the  
long write time of serial flash or EEPROM can cause data loss.  
■ Device ID  
❐ Manufacturer ID and Product ID  
■ Low power consumption  
❐ 300 A active current at 1 MHz  
❐ 100 A (typ) standby current  
❐ 3 A (typ) sleep mode current  
The CY15B104Q provides substantial benefits to users of serial  
EEPROM or flash as a hardware drop-in replacement. The  
CY15B104Q uses the high-speed SPI bus, which enhances the  
high-speed write capability of F-RAM technology. The device  
incorporates a read-only Device ID that allows the host to  
determine the manufacturer, product density, and product  
revision. The device specifications are guaranteed over an  
industrial temperature range of –40 C to +85 C.  
■ Low-voltage operation: VDD = 2.0 V to 3.6 V  
■ Industrial temperature: –40 C to +85 C  
■ Packages  
❐ 8-pin small outline integrated circuit (SOIC) package  
❐ 8-pin thin dual flat no leads (TDFN) package  
For a complete list of related documentation, click here.  
■ Restriction of hazardous substances (RoHS) compliant  
Logic Block Diagram  
WP  
Instruction Decoder  
CS  
HOLD  
SCK  
Clock Generator  
Control Logic  
Write Protect  
512 K x 8  
F-RAM Array  
Instruction Register  
19  
8
Address Register  
Counter  
SI  
SO  
Data I/O Register  
3
Nonvolatile Status  
Register  
Cypress Semiconductor Corporation  
Document Number: 001-94240 Rev. *C  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised September 3, 2015  
1234567...22

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