CY15B102QSN, CY15V102QSN
2 Mb EXCELON™ Ultra Ferroelectric RAM
(F-RAM)
Serial (quad SPI), 256K × 8, 108 MHz, industrial
Features
• 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 8
- Virtually unlimited endurance of 100 trillion (1014) read/write cycles
- 151-year data retention (See “Data retention and endurance” on page 96)
- Infineon instant non-volatile write technology
- Advanced high-reliability ferroelectric process
• Single and multi I/O SPI
- Serial bus interface SPI protocols
- Supports SPI mode 0 (0, 0) and mode 3 (1, 1) for all SDR mode transfers
- Supports SPI mode 0 (0, 0) for all DDR mode transfers
- Extended I/O SPI protocols
- Dual SPI (DPI) protocols
- Quad SPI (QPI) protocols
• SPI clock frequency
- Up to 108-MHz frequency SPI SDR
- Up to 54-MHz frequency SPI DDR
• Execute-in-place (XIP) for memory read/write
• Write protection, data security, and data integrity
• Hardware protection using the write protect (WP) pin
• Software block protection
• Embedded ECC and CRC for enhanced data integrity
- ECC detects and corrects 1-bit error. If a 2-bit error occurs, it does not correct but reports through the ECC
Status register
- CRC detects any accidental change to raw data
• Extended electronic signatures
- Device ID includes manufacturer ID and product ID
- Unique ID
- User programmable serial number
• Dedicated 256-byte special sector F-RAM
- Dedicated special sector write and read
- Content can survive up to three standard reflow cycles
• Low-power consumption at high speed
- 10 mA (typ) active current for 108 MHz SPI SDR
- 16 mA (typ) active current for 108 MHz QSPI SDR and 54-MHz QSPI DDR
- 110 µA (typ) standby current
- 0.80 µA (typ) deep power down mode current
- 0.1 µA (typ) hibernate mode current
• Low-voltage operation:
- CY15V102QSN: VDD = 1.71 V to 1.89 V
- CY15B102QSN: VDD = 1.8 V to 3.6 V
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
page 1
002-26767 Rev. *D
2022-07-26