5秒后页面跳转
CY15B102QSN-108SXI PDF预览

CY15B102QSN-108SXI

更新时间: 2024-09-20 14:53:55
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
114页 983K
描述
2Mb 3.0V Industrial 108MHz QSPI EXCELON? F-RAM in 8-pin SOIC

CY15B102QSN-108SXI 数据手册

 浏览型号CY15B102QSN-108SXI的Datasheet PDF文件第2页浏览型号CY15B102QSN-108SXI的Datasheet PDF文件第3页浏览型号CY15B102QSN-108SXI的Datasheet PDF文件第4页浏览型号CY15B102QSN-108SXI的Datasheet PDF文件第5页浏览型号CY15B102QSN-108SXI的Datasheet PDF文件第6页浏览型号CY15B102QSN-108SXI的Datasheet PDF文件第7页 
CY15B102QSN, CY15V102QSN  
2 Mb EXCELON™ Ultra Ferroelectric RAM  
(F-RAM)  
Serial (quad SPI), 256K × 8, 108 MHz, industrial  
Features  
• 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 8  
- Virtually unlimited endurance of 100 trillion (1014) read/write cycles  
- 151-year data retention (See “Data retention and endurance” on page 96)  
- Infineon instant non-volatile write technology  
- Advanced high-reliability ferroelectric process  
• Single and multi I/O SPI  
- Serial bus interface SPI protocols  
- Supports SPI mode 0 (0, 0) and mode 3 (1, 1) for all SDR mode transfers  
- Supports SPI mode 0 (0, 0) for all DDR mode transfers  
- Extended I/O SPI protocols  
- Dual SPI (DPI) protocols  
- Quad SPI (QPI) protocols  
• SPI clock frequency  
- Up to 108-MHz frequency SPI SDR  
- Up to 54-MHz frequency SPI DDR  
• Execute-in-place (XIP) for memory read/write  
• Write protection, data security, and data integrity  
• Hardware protection using the write protect (WP) pin  
• Software block protection  
• Embedded ECC and CRC for enhanced data integrity  
- ECC detects and corrects 1-bit error. If a 2-bit error occurs, it does not correct but reports through the ECC  
Status register  
- CRC detects any accidental change to raw data  
• Extended electronic signatures  
- Device ID includes manufacturer ID and product ID  
- Unique ID  
- User programmable serial number  
• Dedicated 256-byte special sector F-RAM  
- Dedicated special sector write and read  
- Content can survive up to three standard reflow cycles  
• Low-power consumption at high speed  
- 10 mA (typ) active current for 108 MHz SPI SDR  
- 16 mA (typ) active current for 108 MHz QSPI SDR and 54-MHz QSPI DDR  
- 110 µA (typ) standby current  
- 0.80 µA (typ) deep power down mode current  
- 0.1 µA (typ) hibernate mode current  
• Low-voltage operation:  
- CY15V102QSN: VDD = 1.71 V to 1.89 V  
- CY15B102QSN: VDD = 1.8 V to 3.6 V  
Datasheet  
www.infineon.com  
Please read the Important Notice and Warnings at the end of this document  
page 1  
002-26767 Rev. *D  
2022-07-26  

与CY15B102QSN-108SXI相关器件

型号 品牌 获取价格 描述 数据表
CY15B102QSN-108SXIT INFINEON

获取价格

2Mb 3.0V Industrial 108MHz QSPI EXCELON? F-RAM in 8-pin SOIC
CY15B102Q-SXA INFINEON

获取价格

铁电存储器 (F-RAM)
CY15B102Q-SXAT INFINEON

获取价格

铁电存储器 (F-RAM)
CY15B102Q-SXE CYPRESS

获取价格

2-Mbit (256 K × 8) Serial (SPI) Automotive F
CY15B102Q-SXE INFINEON

获取价格

铁电存储器 (F-RAM)
CY15B102Q-SXET CYPRESS

获取价格

2-Mbit (256 K × 8) Serial (SPI) Automotive F
CY15B102Q-SXET INFINEON

获取价格

铁电存储器 (F-RAM)
CY15B102Q-SXM INFINEON

获取价格

铁电存储器 (F-RAM)
CY15B104QI-20LPXC INFINEON

获取价格

4Mb 3.3V Commercial 20MHz SPI EXCELON? F-RAM in 8-pin GQFN with Inrush current control
CY15B104QI-20LPXCT INFINEON

获取价格

4Mb 3.3V Commercial 20MHz SPI EXCELON? F-RAM in 8-pin GQFN with Inrush current control