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CY15B102QN-50LHXI PDF预览

CY15B102QN-50LHXI

更新时间: 2024-11-28 14:48:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
39页 451K
描述
2Mb 3.3V Industrial 50MHz SPI EXCELON? F-RAM in 8-lead DFN

CY15B102QN-50LHXI 数据手册

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CY15B102QN, CY15V102QN  
2Mb EXCELON™ LP Ferroelectric RAM  
(F-RAM)  
Serial (SPI), 256K × 8, 40 MHz, industrial  
Features  
• 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8  
- Virtually unlimited endurance of 1000 trillion (1015) read/write cycles  
- 151-year data retention (See “Data retention and endurance” on page 25)  
- Infineon instant non-volatile write technology  
- Advanced high-reliability ferroelectric process  
• Fast SPI  
- Up to 50 MHz frequency  
- Supports SPI mode 0 (0, 0) and mode 3 (1, 1)  
• Sophisticated write protection scheme  
- Hardware protection using the write protect (WP) pin  
- Software protection using write disable (WRDI) instruction  
- Software block protection for 1/4, 1/2, or entire array  
• Device ID and serial number  
- Device ID contains manufacturer ID and product ID  
- Unique ID  
- Serial number  
• Dedicated 256-byte special sector F-RAM  
- Dedicated special sector write and read  
- Stored content can survive up to three standard reflow soldering cycles  
• Low-power consumption  
- 2.4 mA (typ) active current at 40 MHz  
- 2.3 µA (typ) standby current  
- 0.70 µA (typ) deep power down mode current  
- 0.1 µA (typ) hibernate mode current  
• Low-voltage operation  
- CY15V102QN: VDD = 1.71 V to 1.89 V  
- CY15B102QN: VDD = 1.8 V to 3.6 V  
• Industrial operating temperature: –40°C to +85°C  
• Packages  
- 8-pin small outline integrated circuit (SOIC) package  
- 8-pin thin dual flat no leads (DFN) package  
- 8-pin plastic dual in-line (PDIP) package  
• Restriction of hazardous substances (RoHS) compliant  
Datasheet  
www.infineon.com  
Please read the Important Notice and Warnings at the end of this document  
page 1  
002-26764 Rev. *D  
2022-09-12  

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