Datasheet > CY15B102N-ZS60XET

CY15B102N-ZS60XET

更新时间： 2024-03-03 10:10:24

品牌	Logo	应用领域
英飞凌 - INFINEON		存储
页数	文件大小	规格书
23页	587K
描述
铁电存储器 (F-RAM)

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CY15B102N

2-Mbit (128K × 16) Automotive-E F-RAM

2-Mbit (128K

× 16) Automotive-E F-RAM

■ Automotive-E temperature: –40 C to +125 C

■ 44-pin thin small outline package (TSOP) Type II

Features

■ 2-Mbit ferroelectric random access memory (F-RAM™)

logically organized as 128K × 16

■ Restriction of hazardous substances (RoHS)-compliant

❐ Configurable as 256K × 8 using UB and LB

❐ High-endurance 10 trillion (10¹³) read/writes

Functional Description

❐ 121-year data retention (see Data Retention and Endurance

on page 10)

❐ NoDelay™ writes

❐ Page-mode operation for 30 ns cycle time

❐ Advanced high-reliability ferroelectric process

The CY15B102N is a 128K × 16 nonvolatile memory that reads

and writes similar to a standard SRAM. A ferroelectric random

access memory or F-RAM is nonvolatile, which means that data

is retained after power is removed. It provides data retention for

over 121 years while eliminating the reliability concerns,

functional disadvantages, and system design complexities of

battery-backed SRAM (BBSRAM). Fast write-timing and high

write-endurance make the F-RAM superior to other types of

memory.

■ SRAM compatible

❐ Industry-standard 128K × 16 SRAM pinout

❐ 60 ns access time, 90 ns cycle time

■ Advanced features

❐ Software-programmable block write-protect

The CY15B102N operation is similar to that of other RAM

devices, and, therefore, it can be used as a drop-in replacement

for a standard SRAM in a system. Read cycles may be triggered

by CE or simply by changing the address and write cycles may

be triggered by CE or WE. The F-RAM memory is nonvolatile

due to its unique ferroelectric memory process. These features

make the CY15B102N ideal for nonvolatile memory applications

requiring frequent or rapid writes.

■ Superior to battery-backed SRAM modules

❐ No battery concerns

❐ Monolithic reliability

❐ True surface-mount solution, no rework steps

❐ Superior for moisture, shock, and vibration

■ Low power consumption

❐ Active current 7 mA (typ)

❐ Standby current 120 A (typ)

The device is available in

surface-mount package. Device specifications are guaranteed

over the Automotive-E temperature range –40 °C to +125 °C.

a 400-mil, 44-pin TSOP-II

■ Low-voltage operation: V_DD= 2.0 V to 3.6 V

Logic Block Diagram

16K x 16 block

16-2

16-0

1-0

. . .

Column Decoder

15-0

Control

UB, LB

I/O Latch & Bus Driver

Logic

Cypress Semiconductor Corporation

Document Number: 002-10177 Rev. *B

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised November 21, 2018

12 3 4 5 6 7...23

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