CY15B064J
64-Kbit (8K × 8) Serial (I2C) Automotive
F-RAM
64-Kbit (8K
× 8) Serial (I2C) Automotive F-RAM
Features
Functional Description
The CY15B064J is a 64-Kbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 121 years
while eliminating the complexities, overhead, and system-level
reliability problems caused by EEPROM and other nonvolatile
memories.
■ 64-Kbit ferroelectric random access memory (F-RAM) logically
organized as 8K × 8
❐ High-endurance 10 trillion (1013) read/writes
❐ 121-year data retention (See Data Retention and Endurance
on page 10)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
Unlike EEPROM, the CY15B064J performs write operations at
bus speed. No write delays are incurred. Data is written to the
memory array immediately after each byte is successfully
transferred to the device. The next bus cycle can commence
without the need for data polling. In addition, the product offers
substantial write endurance compared with other nonvolatile
memories. Also, F-RAM exhibits much lower power during writes
than EEPROM since write operations do not require an internally
elevated power supply voltage for write circuits. The CY15B064J
is capable of supporting 1013 read/write cycles, or 10 million
times more write cycles than EEPROM.
■ Fast two-wire Serial interface (I2C)
❐ Up to 1-MHz frequency
❐ Direct hardware replacement for serial (I2C) EEPROM
❐ Supports legacy timings for 100 kHz and 400 kHz
■ Low power consumption
❐ 120 A (typ) active current at 100 kHz
❐ 6 A (typ) standby current
■ Voltage operation: VDD = 3.0 V to 3.6 V
■ Automotive-E temperature: –40 C to +125 C
■ 8-pin small outline integrated circuit (SOIC) package
■ AEC Q100 Grade 1 compliant
These capabilities make the CY15B064J ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data logging, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of EEPROM can cause data loss. The
combination of features allows more frequent data writing with
less overhead for the system.
■ Restriction of hazardous substances (RoHS) compliant
The CY15B064J provides substantial benefits to users of serial
(I2C) EEPROM as a hardware drop-in replacement. The device
specifications are guaranteed over an automotive-e temperature
range of –40 C to +125 C.
Logic Block Diagram
8 K x 8
F-RAM Array
Address
Latch
Counter
13
8
Serial to Parallel
Converter
SDA
Data Latch
8
SCL
WP
Control Logic
A2-A0
Cypress Semiconductor Corporation
Document Number: 002-10027 Rev. *C
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised November 22, 2018
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