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CY15B064J-SXE PDF预览

CY15B064J-SXE

更新时间: 2024-10-29 17:00:43
品牌 Logo 应用领域
英飞凌 - INFINEON 存储
页数 文件大小 规格书
19页 594K
描述
铁电存储器 (F-RAM)

CY15B064J-SXE 数据手册

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CY15B064J  
64-Kbit (8K × 8) Serial (I2C) Automotive  
F-RAM  
64-Kbit (8K  
× 8) Serial (I2C) Automotive F-RAM  
Features  
Functional Description  
The CY15B064J is a 64-Kbit nonvolatile memory employing an  
advanced ferroelectric process. A ferroelectric random access  
memory or F-RAM is nonvolatile and performs reads and writes  
similar to a RAM. It provides reliable data retention for 121 years  
while eliminating the complexities, overhead, and system-level  
reliability problems caused by EEPROM and other nonvolatile  
memories.  
64-Kbit ferroelectric random access memory (F-RAM) logically  
organized as 8K × 8  
High-endurance 10 trillion (1013) read/writes  
121-year data retention (See Data Retention and Endurance  
on page 10)  
NoDelay™ writes  
Advanced high-reliability ferroelectric process  
Unlike EEPROM, the CY15B064J performs write operations at  
bus speed. No write delays are incurred. Data is written to the  
memory array immediately after each byte is successfully  
transferred to the device. The next bus cycle can commence  
without the need for data polling. In addition, the product offers  
substantial write endurance compared with other nonvolatile  
memories. Also, F-RAM exhibits much lower power during writes  
than EEPROM since write operations do not require an internally  
elevated power supply voltage for write circuits. The CY15B064J  
is capable of supporting 1013 read/write cycles, or 10 million  
times more write cycles than EEPROM.  
Fast two-wire Serial interface (I2C)  
Up to 1-MHz frequency  
Direct hardware replacement for serial (I2C) EEPROM  
Supports legacy timings for 100 kHz and 400 kHz  
Low power consumption  
120 A (typ) active current at 100 kHz  
6 A (typ) standby current  
Voltage operation: VDD = 3.0 V to 3.6 V  
Automotive-E temperature: –40 C to +125 C  
8-pin small outline integrated circuit (SOIC) package  
AEC Q100 Grade 1 compliant  
These capabilities make the CY15B064J ideal for nonvolatile  
memory applications, requiring frequent or rapid writes.  
Examples range from data logging, where the number of write  
cycles may be critical, to demanding industrial controls where the  
long write time of EEPROM can cause data loss. The  
combination of features allows more frequent data writing with  
less overhead for the system.  
Restriction of hazardous substances (RoHS) compliant  
The CY15B064J provides substantial benefits to users of serial  
(I2C) EEPROM as a hardware drop-in replacement. The device  
specifications are guaranteed over an automotive-e temperature  
range of –40 C to +125 C.  
Logic Block Diagram  
8 K x 8  
F-RAM Array  
Address  
Latch  
Counter  
13  
8
Serial to Parallel  
Converter  
SDA  
Data Latch  
8
SCL  
WP  
Control Logic  
A2-A0  
Cypress Semiconductor Corporation  
Document Number: 002-10027 Rev. *C  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised November 22, 2018  

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