Datasheet > CY15B101N

CY15B101N

更新时间： 2022-02-26 12:13:12

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		/
页数	文件大小	规格书
19页	471K
描述
1-Mbit (64K Ã 16) Automotive F-RAM Memory

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中文翻译

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CY15B101N 数据手册

CY15B101N

1-Mbit (64K × 16) Automotive F-RAM Memory

1-Mbit (64K

× 16) Automotive F-RAM Memory

■ 44-pin thin small outline package (TSOP) Type II

Features

■ Restriction of hazardous substances (RoHS)-compliant

■ 1-Mbit ferroelectric random access memory (F-RAM™)

logically organized as 64K × 16

❐ Configurable as 128K × 8 using UB and LB

❐ High-endurance 100 trillion (10¹⁴) read/writes

❐ 151-year data retention (see the Data Retention and

Endurance table)

❐ NoDelay™ writes

❐ Page-mode operation for 30-ns cycle time

❐ Advanced high-reliability ferroelectric process

Functional Description

The CY15B101N is a 64K × 16 nonvolatile memory that reads

and writes similar to a standard SRAM. A ferroelectric random

access memory or F-RAM is nonvolatile, which means that data

is retained after power is removed. It provides data retention for

over 151 years while eliminating the reliability concerns,

functional disadvantages, and system design complexities of

battery-backed SRAM (BBSRAM). Fast write-timing and high

write-endurance make the F-RAM superior to other types of

memory.

■ SRAM compatible

❐ Industry-standard 64K × 16 SRAM pinout

❐ 60-ns access time, 90-ns cycle time

The CY15B101N operation is similar to that of other RAM

devices, and, therefore, it can be used as a drop-in replacement

for a standard SRAM in a system. Read cycles may be triggered

by CE or simply by changing the address and write cycles may

be triggered by CE or WE. The F-RAM memory is nonvolatile

due to its unique ferroelectric memory process. These features

make the CY15B101N ideal for nonvolatile memory applications

requiring frequent or rapid writes.

■ Superior to battery-backed SRAM modules

❐ No battery concerns

❐ Monolithic reliability

❐ True surface-mount solution, no rework steps

❐ Superior for moisture, shock, and vibration

■ Low power consumption

❐ Active current 7 mA (typ)

❐ Standby current 120 A (typ)

The device is available in

surface-mount package. Device specifications are guaranteed

over the Automotive-A temperature range –40 °C to +85 °C.

a 400-mil, 44-pin TSOP-II

■ Low-voltage operation: V_DD= 2.0 V to 3.6 V

■ Automotive-A temperature: –40 C to +85 C

For a complete list of related resources, click here.

Logic Block Diagram

64K x 16 block

F-RAM Array

15-2

15-0

1-0

. . .

Column Decoder

15-0

I/O Latch & Bus Driver

Control

UB, LB

Logic

Cypress Semiconductor Corporation

Document Number: 001-96058 Rev. *E

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised January 16, 2018

12 3 4 5 6 7...19

中文翻译

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与CY15B101N相关器件

型号	品牌	获取价格	描述	数据表
CY15B101N-ZS60XA	CYPRESS	获取价格	1-Mbit (64K Ã 16) Automotive F-RAM Memory
CY15B101N-ZS60XA	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15B101N-ZS60XAT	CYPRESS	获取价格	1-Mbit (64K Ã 16) Automotive F-RAM Memory
CY15B101N-ZS60XAT	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15B101N-ZS60XET	INFINEON	获取价格	nvSRAM (non-volatile SRAM)
CY15B101N-ZS60XM	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15B102N	CYPRESS	获取价格	2-Mbit (128K Ã 16) Automotive F-RAM Memory
CY15B102N-ZS60XA	CYPRESS	获取价格	Memory Circuit, 128KX16, CMOS, PDSO44, 0.400 INCH, ROHS COMPLIANT, TSOP2-44
CY15B102N-ZS60XA	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15B102N-ZS60XAT	CYPRESS	获取价格	2-Mbit (128K Ã 16) Automotive F-RAM Memory

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