Datasheet > CXK77V1840GB-12

CXK77V1840GB-12

更新时间： 2024-09-20 21:22:15

品牌	Logo	应用领域
索尼 - SONY		静态存储器
页数	文件大小	规格书
10页	143K
描述
Standard SRAM, 512KX9, 7.5ns, CMOS, PBGA119, 0.050 INCH PITCH, PLASTIC, BGA-119

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技术参数
数据手册

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CXK77V1840GB-12 技术参数

生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	BGA, BGA119,7X17,50	针数：	119
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.84
Base Number Matches：	1

CXK77V1840GB-12 数据手册

CXK77V1840GB -8/10/12

^{262,144-Word by 18-bit High Speed CMOS Synchronous Static RAM}Preliminary

Description

119 pin BGA (Plastic)

The CXK77V1840GB is a high speed CMOS

synchronous static RAM with common I/O pins,

organized as 262,144-words by 18-bits. This

synchronous SRAM integrates input registers, high

speed SRAM and output registers onto a single

monolithic IC. All input signals except OE are

latched at the positive edge of an external clock

(CLK). The RAM data from the previous cycle is

presented at the positive edge of the subsequent

Features

clock cycle. Write operation is initiated by the

• Fast cycle time:

(Cycle) (Frequency)

8 ns 125 MHz

positive edge of CLK and is internally self-timed.

This feature eliminates complex off-chip write pulse

generation and provides increased flexibility for

incoming signals. Asynchronous OE adds the

flexibility of data bus control. 125 MHz operation is

obtained from a single 3.3 V power supply.

CXK77V1840GB-8

CXK77V1840GB-10

CXK77V1840GB-12

• Fast clock to data valid

CXK77V1840GB-8

CXK77V1840GB-10

CXK77V1840GB-12

10 ns 100 MHz

12 ns 83.3 MHz

4 ns

5.5 ns

7.5 ns

• High speed, low power consumption

• Single +3.3 V power supply: 3.3 V +10 % –5 %

• Inputs and outputs are LVTTL/LVCMOS

compatible

• Byte Select capability

• Asynchronous OE

• Common data input and output

• All inputs (except OE) and outputs are registered

on a single clock edge

• Self-timed write cycle

• Package

CXK77V1840GB

7 × 17 Plastic Ball Grid Array

with 50 mil pitch

Structure

Silicon gate CMOS IC

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

—1—

PE96748-TE

12 3 4 5 6 7...10

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与CXK77V1840GB-12相关器件

型号	品牌	获取价格	描述	数据表
CXK77V1840GB-8	SONY	获取价格	Standard SRAM, 512KX9, 4ns, CMOS, PBGA119, 0.050 INCH PITCH, PLASTIC, BGA-119
CXK77V3211Q	SONY	获取价格	32768-word by 32-bit High Speed Synchronous Static RAM
CXK77V3211Q11	ETC	获取价格	x32 Fast Synchronous SRAM
CXK77V3211Q-11	SONY	获取价格	Standard SRAM, 32KX32, 11ns, MOS, PQFP100, QFP-100
CXK77V3211Q-12	SONY	获取价格	32768-word by 32-bit High Speed Synchronous Static RAM
CXK77V3211Q-14	SONY	获取价格	32768-word by 32-bit High Speed Synchronous Static RAM
CXK77V3211R-14	ETC	获取价格	x32 Fast Synchronous SRAM
CXK77V3211R-14L	ETC	获取价格	x32 Fast Synchronous SRAM
CXK77V940GB-10	ETC	获取价格	x9 Synchronous SRAM
CXK77V940GB-12	ETC	获取价格	x9 Synchronous SRAM

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