Datasheet > CSD87501L_15

CSD87501L_15

更新时间： 2024-11-21 01:12:43

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德州仪器 - TI		/
页数	文件大小	规格书
12页	896K
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CSD87501L 30 V Dual Common Drain N-Channel NexFET Power MOSFET

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CSD87501L

SLPS523A –FEBRUARY 2015–REVISED APRIL 2015

CSD87501L 30 V Dual Common Drain N-Channel NexFET™ Power MOSFET

1 Features

Product Summary

•

Low On-Resistance

Small Footprint of 3.37 × 1.47 mm

Ultra-Low Profile – 0.2 mm High

Pb-Free

T_A= 25°C

V_S1S2

Q_g

TYPICAL VALUE

UNIT

•

Source-to-Source Voltage

Gate Charge Total (4.5 V)

Gate Charge Gate-to-Drain

mΩ

Q_gd

6.0

V_GS= 4.5 V

V_GS= 10 V

1.8

9.3

6.6

RoHS Compliant

Source-to-Source On-

Resistance

R_S1S2(on)

V_GS(th)

Halogen Free

Threshold Voltage

Gate ESD Protection

2 Applications

Ordering Information⁽¹⁾

•

Battery Management

Battery Protection

USB Type-C /PD

Device

Media

Qty

Package

Ship

CSD87501L

7-Inch Reel

3000

3.37 mm X 1.47 mm

Land Grid Array

Package

Tape and

Reel

CSD87501LT 7-Inch Reel

250

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

3 Description

This 30 V, 6.6 mΩ, 3.37 mm × 1.47 mm LGA Dual

NexFET™ power MOSFET is designed to minimize

resistance and gate charge in a small footprint. Its

small size and common drain configuration make the

device ideal for multi-cell battery pack applications

and small handheld devices.

Absolute Maximum Ratings

T_A= 25°C

VALUE

UNIT

V_S1S2Source-to-Source Voltage

V_GS

I_S

Gate-to-Source Voltage

Continuous Source Current⁽¹⁾

±20

(2)

I_SM

P_D

Pulsed Source Current

Top View

Power Dissipation

2.5

V_(ESD)

Rating

Human Body Model (HBM)

°C

T_J,

T_stg

Operating Junction and

Storage Temperature Range

–55 to 150

(1) Typical R_θJA= 50°C/W on a 1 inch², 2 oz. Cu pad on a 0.06

inch thick FR4 PCB.

(2) Typical min Cu R_θJA= 135°C/W, pulse duration ≤100 μs, duty

cycle ≤1%.

Configuration

Source 1

Source 2

Gate 1

Gate 2

R_S1S2(on)vs V_GS

Gate Charge

T_C= 25°C, I _S= 7 A

T_C= 125°C, I _S= 7 A

I_S= 7 A, V_S1S2= 15 V

V_GS- Gate-to-Source Voltage (V)

Q_g- Gate Charge (nC)

D007

D004

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

12 3 4 5 6 7...12

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与CSD87501L_15相关器件

型号	品牌	获取价格	描述	数据表
CSD87501LT	TI	获取价格	CSD87501L 30 V Dual Common Drain N-Channel NexFET Power MOSFET
CSD87502Q2	TI	获取价格	采用 2mm x 2mm SON 封装、具有栅极 ESD 保护的双路、42mΩ、30V、N
CSD87502Q2T	TI	获取价格	采用 2mm x 2mm SON 封装、具有栅极 ESD 保护的双路、42mΩ、30V、N
CSD87503Q3E	TI	获取价格	采用 3mm x 3mm SON 封装的双路共源极、21.9mΩ、30V、N 沟道 Nex
CSD87503Q3ET	TI	获取价格	采用 3mm x 3mm SON 封装的双路共源极、21.9mΩ、30V、N 沟道 Nex
CSD87588N	TI	获取价格	Synchronous Buck NexFET Power Block II
CSD87588N_15	TI	获取价格	CSD87588N Synchronous Buck NexFET Power Block II
CSD87588NT	TI	获取价格	CSD87588N Synchronous Buck NexFET Power Block II
CSD880	CDIL	获取价格	Audio Frequency Power Amplifier Applications
CSD880GR	CDIL	获取价格	Audio Frequency Power Amplifier Applications

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