CS3N120A0R-G PDF预览

CS3N120A0R-G

更新时间: 2025-07-15 15:19:11
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CS3N120A0R-G 数据手册

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CS3N120 A0R-G  
R
Electrical CharacteristicsTJ= 25unless otherwise specified:  
OFF Characteristics  
Rating  
Typ.  
--  
Unit  
Parameter  
Test Conditions  
Symbol  
Min.  
1200  
--  
Max.  
--  
s
VGS=0V, ID=250µA  
Drain to Source Breakdown Voltage  
Bvdss Temperature Coefficient  
V
VDSS  
ID=250uA,Reference25  
V/  
µA  
µA  
nA  
1.24  
--  
ΔBVDSS/ΔTJ  
VDS =1200V, VGS= 0V,  
TJ = 25℃  
VDS =960V, VGS= 0V,  
TJ = 125℃  
--  
--  
--  
--  
--  
25  
Drain to Source Leakage Current  
IDSS  
--  
250  
100  
-100  
VGS =+30V  
VGS =-30V  
Gate to Source Forward Leakage  
Gate to Source Reverse Leakage  
IGSS(F)  
IGSS(R)  
--  
nA  
--  
ON Characteristics  
Rating  
Parameter  
Test Conditions  
Symbol  
Units  
Min.  
--  
Typ. Max.  
VGS=10V,ID=1.5A  
Drain-to-Source On-Resistance  
Gate Threshold Voltage  
RDS(ON)  
VGS(TH)  
5.1  
--  
6.0  
5.0  
VDS = VGS, ID = 250µA  
3.0  
V
Pulse width tp300µs,δ≤2%  
Dynamic Characteristics  
Rating  
Typ.  
5
Parameter  
Test Conditions  
Symbol  
Units  
Min.  
--  
Max.  
--  
VDS=15V, ID =1.5A  
f = 1.0MHz  
Forward Trans conductance  
Gate resistance  
gfs  
S
Rg  
--  
--  
2.2  
Input Capacitance  
Ciss  
Coss  
Crss  
--  
--  
1006  
59.8  
2.2  
VGS = 0V VDS = 25V  
f = 1.0MHz  
Output Capacitance  
--  
--  
pF  
Reverse Transfer Capacitance  
--  
--  
Resistive Switching Characteristics  
Rating  
Parameter  
Test Conditions  
Symbol  
Units  
ns  
Min.  
--  
Typ.  
Max.  
--  
Turn-on Delay Time  
Rise Time  
td(ON)  
tr  
td(OFF)  
tf  
15.1  
19.4  
25.6  
76.2  
19.7  
7.5  
--  
--  
ID =3A VDD = 600V  
RG =10Ω  
Turn-Off Delay Time  
Fall Time  
--  
--  
--  
--  
Total Gate Charge  
Gate to Source Charge  
Gate to Drain (Miller)Charge  
Qg  
--  
--  
ID =3A VDD =960V  
VGS = 10V  
Qgs  
Qgd  
nC  
--  
--  
--  
5.4  
--  
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