Silicon N-Channel Power MOSFET
CS3N120 A8R
R
○
General Description:
VDSS
1200
3
V
CS3N120 A8R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features:
ID
A
W
Ω
PD(TC=25℃)
RDS(ON)Typ
178
5.1
l Fast Switching
l Low ON Resistance(Rdson≤6.0Ω)
l Low Gate Charge (Typical Data:19.7 nC)
l Low Reverse transfer capacitances(Typical:2.2 pF)
l 100% Single Pulse avalanche energy Test
Applications:
Electric welder、Inverter.
Absolute(TJ= 25℃ unless otherwise specified):
Parameter
Symbol
VDSS
Rating
Units
Drain-to-Source Voltage
1200
V
A
Continuous Drain Current TC = 25 °C
Continuous Drain Current TC = 100 °C
Pulsed Drain Current TC = 25 °C
Gate-to-Source Voltage
3
ID
1.8
A
a1
12
A
IDM
VGS
V
±30
a2
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
30
mJ
V/ns
W
EAS
a3
5.0
dv/dt
Power Dissipation TC = 25 °C
Derating Factor above 25°C
178
1.4
PD
W/℃
℃
Operating Junction and Storage Temperature Range
TJ,Tstg
150,–55 to 150
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10
2022V01