Datasheet > CS3N30B23H

CS3N30B23H

更新时间： 2024-04-09 18:58:51

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	246K
描述
SOT-223

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CS3N30B23H 数据手册

Silicon N-Channel Power MOSFET

CS3N30 B23H

○

General Description：

V_DSS

300

CS3N30 B23H, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is

SOT-223, which accords with the RoHS standard.

Features：

I_D

P_D(T_C=25℃)

R_DS(ON)TYP

2.5

2.2

Ω

l Fast Switching

l Low ON Resistance(Rdson≤3Ω)

l Low Gate Charge (Typical Data:4.2nC)

l Low Reverse transfer capacitances(Typical:4.8pF)

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of LCD Power and adapter.

Absolute（Tc= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

300

Continuous Drain Current

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

1.8

I_DM

Gate-to-Source Voltage

V_GS

±30

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

V/ns

E_AS

dv/dt

2.5

0.02

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

W/℃

℃

T_J，T_stg

150，–55 to 150

300

T_L

℃

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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