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CS18N50A8R PDF预览

CS18N50A8R

更新时间: 2024-10-29 15:18:39
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 403K
描述
TO-220

CS18N50A8R 数据手册

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Silicon N-Channel Power MOSFET  
CS18N50 A8R  
R
General Description  
VDSS  
500  
V
A
CS18N50 A8R, the silicon N-channel Enhanced  
VDMOSFETs, is obtained by the self-aligned planar Technology  
which reduce the conduction loss, improve switching  
performance and enhance the avalanche energy. The transistor  
can be used in various power switching circuit for system  
miniaturization and higher efficiency. The package form is  
TO-220AB, which accords with the RoHS standard.  
Features  
ID  
18  
PD(TC=25)  
RDS(ON)Typ  
190  
0.31  
W
l Fast Switching  
l Low ON Resistance(Rdson0.35)  
l Low Gate Charge (Typical Data: 45.7nC)  
l Low Reverse transfer capacitances(Typical:5.97 pF)  
l 100% Single Pulse avalanche energy Test  
Applications:  
Power switch circuit of adaptor and charger.  
AbsoluteTj= 25unless otherwise specified:  
Parameter  
Symbol  
VDSS  
Rating  
Units  
Drain-to-Source Voltage  
500  
V
A
Continuous Drain Current TC = 25 °C  
Continuous Drain Current TC = 100 °C  
Pulsed Drain Current TC = 25 °C  
Gate-to-Source Voltage  
18  
ID  
11  
A
a1  
72  
A
IDM  
VGS  
±30  
V
a2  
Single Pulse Avalanche Energy  
Peak Diode Recovery dv/dt  
999  
mJ  
V/ns  
W
EAS  
a3  
5.0  
dv/dt  
Power Dissipation TC = 25 °C  
Derating Factor above 25°C  
190  
PD  
1.5  
15055 to 150  
300  
W/℃  
Operating Junction and Storage Temperature Range  
Maximum Temperature for Soldering  
TJTstg  
TL  
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 6  
2020V01  

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