Datasheet > CS19

CS19

更新时间： 2024-11-18 06:48:59

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	58K
描述
Phase Control Thyristor

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中文翻译

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数据手册

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CS19 数据手册

ADVANCE TECHNICAL INFORMATION

CS 19

V_RRM

I_T(RMS)= 35 A

I_T(AV)M= 13 A

= 800 - 1200 V

Phase Control Thyristor

ISOPLUS220^TM

Electrically Isolated Back Surface

ISOPLUS220^TM

V_RSM

V_DSM

V_RRM

V_DRM

Type

800

1200 1200

800

CS 19-08ho1C

CS 19-12ho1C

Isolated back surface *

* Patent pending

Symbol

Test Conditions

Maximum Ratings

Features

I_T(RMS)

I_T(AV)M

T_VJ= T_VJM

T_C= 85°C; 180° sine

I_TSM

T_VJ= 45°C;

V_R= 0 V

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

100

105

Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

Low cathode-to-tab capacitance (15pF

typical)

T_VJ= T_VJM

V_R= 0 V

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

I²t

T_VJ= 45°C

V_R= 0 V

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

A²s

Planar passivated chips

Epoxy meets UL 94V-0

T_VJ= T_VJM

V_R= 0 V

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

A²s

High performance glass

passivated chip

Long-term stability of leakage

current and blocking voltage

(di/dt)_cr

T_VJ= T_VJM

f = 50Hz, t_P=200µs

V_D= 2/3 V_DRM

repetitive, I_T= 20 A

100

A/µs

I_G=0.08 A

di_G/dt = 0.08 A/µs

non repetitive, I_T= I_T(AV)M

500

A/µs

V/µs

Applications

(dv/dt)_cr

P_GM

T_VJ= T_VJM

;

V_DR= 2/3 V_DRM

R_GK= ∞; method 1 (linear voltage rise)

Motor control

Power converter

T_VJ= T_VJM

I_T= I_T(AV)M

t_P=

30 µs

300 µs

2.5

0.5

AC power controller

Light and temperature control

P_GAV

V_RGM

SCR for inrush current limiting

in power supplies or AC drive

T_VJ

T_VJM

T_stg

-40...+125

125

-40...+125

°C

Advantages

Space and weight savings

Simple mounting

V_ISOL

50/60 Hz RMS; I_ISOL≤ 1 mA

2500

T_L

F_C

1.6mm from case; 10s

Mounting force

260

°C

11...65 / 2.4...11

N / lb

Weight

IXYS reserves the right to change limits, conditions and dimensions.

98789 (5/01)

中文翻译

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CS19-08HO1	IXYS	获取价格	Phase Control Thyristors
CS19-08HO1	LITTELFUSE	获取价格	高效SCR系列提供采用各种封装的晶闸管，具有改进的正向电压特性和高达1200V的击穿电压。
CS19-08HO1C	IXYS	获取价格	Silicon Controlled Rectifier, 35A I(T)RMS, 13000mA I(T), 800V V(DRM), 800V V(RRM), 1 Eleme
CS19-08HO1S	IXYS	获取价格	Phase Control Thyristors
CS19-08HO1S	LITTELFUSE	获取价格	高效SCR系列提供采用各种封装的晶闸管，具有改进的正向电压特性和高达1200V的击穿电压。
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CS19-08HO1S-TRL	LITTELFUSE	获取价格	Silicon Controlled Rectifier,
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CS19-08HO1S-TUB	IXYS	获取价格	Silicon Controlled Rectifier
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