Datasheet > CRSS050N10N3

CRSS050N10N3

更新时间： 2024-04-09 19:01:08

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
11页	1367K
描述
TO-263(或D2PAK)

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数据手册

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CRSS050N10N3 数据手册

CRST052N10N3,CRSS050N10N3

华润微电子(重庆)有限公司

SkyMOS3 N-MOSFET 100V, 4.4mΩ, 130A

Features

Product Summary

V_DS

100V

• Uses CRM(CQ) advanced SkyMOS3 technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Qualified according to JEDEC criteria

R_DS(on).typ

I_D

4.4mΩ

130A

100% DVDS Tested

Applications

100% Avalanche Tested

• Motor control and drive

• Battery management System

• UPS (Uninterrupible Power Supplies)

CRST052N10N3

CRSS050N10N3

Package Marking and Ordering Information

Part #

Marking

Package

TO-220

TO-263

Packing

Tube

Reel Size Tape Width

Qty

CRST052N10N3

CRSS050N10N3

CRST052N10N3

CRSS050N10N3

N/A

50pcs

Tape

1000pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

100

Continuous drain current

T_C= 25°C (Silicon limit)

T_C= 25°C (Package limit)

T_C= 100°C (Silicon limit)

130

160

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

Avalanche energy, single pulse (ID = 48A, Rg=25Ω)^[1]

)

I_{D pulse}

E_AS

520

583

V_GS

Gate-Source voltage

±20

Power dissipation (T_C= 25°C)

P_tot

167

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

Soldering temperature, wave soldering only allowed at leads

(1.6mm from case for 10s)

Tsold

260

°C

※. Notes:

1.EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS =48A, VGS = 10V.

Rev 1.0

©China Resources Microelectronics (Chongqing) Limited

Page 1

12 3 4 5 6 7...11

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