Datasheet > CRSS109N20NZ

CRSS109N20NZ

更新时间： 2024-11-21 17:01:39

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
11页	1339K
描述
TO-263(或D2PAK)

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中文翻译

获取价格

数据手册

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CRSS109N20NZ 数据手册

CRSS109N20NZ

华润微电子(重庆)有限公司

SkyMOS3 N-MOSFET 200V, 8.5mΩ, 100A

Features

Product Summary

V_DS

200V

• Uses CRM(CQ) advanced SkyMOS3 technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Qualified according to JEDEC criteria

R_DS(on)

I_D

8.5mΩ

100A

100% DVDS Tested

Applications

100% Avalanche Tested

• Motor control and drive

• Battery management

• UPS (Uninterrupible Power Supplies)

CRSS109N20NZ

Package Marking and Ordering Information

Part #

Marking

Package

TO-263

Reel Size

Tape Width

N/A

Qty

Packing

Reel

CRSS109N20NZ

N/A

1000pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

200

Continuous drain current

T_C= 25°C (Silicon limit)

T_C= 25°C (Package limit)

T_C= 100°C (Silicon limit)

100

160

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

)

I_{D pulse}

E_AS

400

306

Avalanche energy, single pulse (I_AS= 35A, Rg=25Ω)

Gate-Source voltage

V_GS

±20

Power dissipation (T_C= 25°C)

P_tot

250

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

Soldering temperature, wave soldering only allowed at leads

(1.6mm from case for 10s)

Tsold

260

°C

Rev 3.0

©China Resources Microelectronics (Chongqing) Limited

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中文翻译

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