CRST059N07N,CRSS056N07N
SkyMOS1ꢀNꢁMOSFETꢀ70V,ꢀ4.9mꢂ,ꢀ110A
华润微电子(重庆)有限公司
Features
Product Summary
VDS
70V
•ꢀUsesꢀCRM(CQ)ꢀadvancedꢀSkyMOS1ꢀtechnology
•ꢀExtremelyꢀlowꢀonꢁresistanceꢀRDS(on)
•ꢀExcellentꢀQgxRDS(on)ꢀproduct(FOM)
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀcriteria
RDS(on)
IDꢀ
4.9mꢂ
110A
Applications
•ꢀMotorꢀcontrolꢀandꢀdrive
•ꢀBatteryꢀmanagement
•ꢀUPSꢀ(UninterrupibleꢀPowerꢀSupplies)
100% Avalanche Tested
CRST059N07N
CRSS056N07N
Package Marking and Ordering Information
Partꢀ#
Marking
Package
TOꢁ220
TOꢁ263
ReelꢀSize
TapeꢀWidth
N/A
Qty
Packing
Tube
CRST059N07N
CRSS056N07N
N/A
N/A
50pcs
50pcs
ꢁ
ꢁ
Tube
N/A
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
VDS
Drainꢁsourceꢀvoltage
70
V
Continuousꢀdrainꢀcurrent
TCꢀ=ꢀ25°Cꢀ(Siliconꢀlimit)
TCꢀ=ꢀ25°Cꢀ(Packageꢀlimit)
TCꢀ=ꢀ100°Cꢀ(Siliconꢀlimit)
110ꢀ
120
69ꢀ
ID
A
Pulsedꢀdrainꢀcurrentꢀ(TCꢀ=ꢀ25°C,ꢀtpꢀlimitedꢀbyꢀTjmax
)
IDꢀpulse
EAS
440ꢀ
121ꢀ
A
mJ
V
Avalancheꢀenergy,ꢀsingleꢀpulseꢀ(L=0.5mH,ꢀRg=25Ω)
GateꢁSourceꢀvoltage
VGS
±20
Powerꢀdissipationꢀ(TCꢀ=ꢀ25°C)
Ptot
119ꢀ
W
°C
Tjꢀ,ꢀT stg
Operatingꢀjunctionꢀandꢀstorageꢀtemperature
ꢁ55...+150
※.ꢀNotes:1.EASꢀisꢀtestedꢀatꢀstartingꢀTjꢀ=ꢀ25℃,ꢀLꢀ=ꢀ0.5mH,ꢀIASꢀ=ꢀ22.0A,ꢀVGSꢀ=ꢀ10V.ꢀ
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