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CRST059N07N PDF预览

CRST059N07N

更新时间: 2024-11-19 15:18:39
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 568K
描述
TO-220

CRST059N07N 数据手册

 浏览型号CRST059N07N的Datasheet PDF文件第2页浏览型号CRST059N07N的Datasheet PDF文件第3页浏览型号CRST059N07N的Datasheet PDF文件第4页浏览型号CRST059N07N的Datasheet PDF文件第5页浏览型号CRST059N07N的Datasheet PDF文件第6页浏览型号CRST059N07N的Datasheet PDF文件第7页 
CRST059N07N,CRSS056N07N  
SkyMOS1ꢀNꢁMOSFETꢀ70V,ꢀ4.9mꢂ,ꢀ110A  
华润微电子(重庆)有限公司  
Features  
Product Summary  
VDS  
70V  
•ꢀUsesꢀCRM(CQ)ꢀadvancedꢀSkyMOS1ꢀtechnology  
•ꢀExtremelyꢀlowꢀonꢁresistanceꢀRDS(on)  
•ꢀExcellentꢀQgxRDS(on)ꢀproduct(FOM)  
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀcriteria  
RDS(on)  
IDꢀ  
4.9mꢂ  
110A  
Applications  
•ꢀMotorꢀcontrolꢀandꢀdrive  
•ꢀBatteryꢀmanagement  
•ꢀUPSꢀ(UninterrupibleꢀPowerꢀSupplies)  
100% Avalanche Tested  
CRST059N07N  
CRSS056N07N  
Package Marking and Ordering Information  
Partꢀ#  
Marking  
Package  
TOꢁ220  
TOꢁ263  
ReelꢀSize  
TapeꢀWidth  
N/A  
Qty  
Packing  
Tube  
CRST059N07N  
CRSS056N07N  
N/A  
N/A  
50pcs  
50pcs  
Tube  
N/A  
Absolute Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
VDS  
Drainꢁsourceꢀvoltage  
70  
V
Continuousꢀdrainꢀcurrent  
TCꢀ=ꢀ25°Cꢀ(Siliconꢀlimit)  
TCꢀ=ꢀ25°Cꢀ(Packageꢀlimit)  
TCꢀ=ꢀ100°Cꢀ(Siliconꢀlimit)  
110ꢀ  
120  
69ꢀ  
ID  
A
Pulsedꢀdrainꢀcurrentꢀ(TCꢀ=ꢀ25°C,ꢀtpꢀlimitedꢀbyꢀTjmax  
)
IDꢀpulse  
EAS  
440ꢀ  
121ꢀ  
A
mJ  
V
Avalancheꢀenergy,ꢀsingleꢀpulseꢀ(L=0.5mH,ꢀRg=25)  
GateꢁSourceꢀvoltage  
VGS  
±20  
Powerꢀdissipationꢀ(TCꢀ=ꢀ25°C)  
Ptot  
119ꢀ  
W
°C  
Tjꢀ,ꢀT stg  
Operatingꢀjunctionꢀandꢀstorageꢀtemperature  
ꢁ55...+150  
.ꢀNotes:1.EASꢀisꢀtestedꢀatꢀstartingꢀTjꢀ=ꢀ25,ꢀLꢀ=ꢀ0.5mH,ꢀIASꢀ=ꢀ22.0A,ꢀVGSꢀ=ꢀ10V.ꢀ  
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