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CRST150N10N2 PDF预览

CRST150N10N2

更新时间: 2024-11-19 15:19:07
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
9页 459K
描述
TO-220

CRST150N10N2 数据手册

 浏览型号CRST150N10N2的Datasheet PDF文件第2页浏览型号CRST150N10N2的Datasheet PDF文件第3页浏览型号CRST150N10N2的Datasheet PDF文件第4页浏览型号CRST150N10N2的Datasheet PDF文件第5页浏览型号CRST150N10N2的Datasheet PDF文件第6页浏览型号CRST150N10N2的Datasheet PDF文件第7页 
CRST150N10N2  
SkyMOS2ꢀNꢁMOSFETꢀ100V,ꢀ12.2mꢂ,ꢀ80A  
华润微电子(重庆)有限公司  
Features  
Product Summary  
VDS  
100V  
•ꢀUsesꢀCRM(CQ)ꢀadvancedꢀSkyMOS2ꢀtechnology  
•ꢀExtremelyꢀlowꢀonꢁresistanceꢀRDS(on)  
•ꢀExcellentꢀQgxRDS(on)ꢀproduct(FOM)  
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀcriteria  
RDS(on)  
IDꢀ  
12.2mꢂ  
80A  
Applications  
•ꢀMotorꢀcontrolꢀandꢀdrive  
•ꢀBatteryꢀmanagement  
•ꢀUPSꢀ(UninterrupibleꢀPowerꢀSupplies)  
100% Avalanche Tested  
CRST150N10N2  
Package Marking and Ordering Information  
Partꢀ#  
Marking  
Package  
TOꢁ220  
ReelꢀSize  
TapeꢀWidth  
N/A  
Qty  
Packing  
Tube  
CRST150N10N2  
N/A  
50pcs  
Absolute Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
VDS  
Drainꢁsourceꢀvoltage  
100  
V
Continuousꢀdrainꢀcurrent  
TCꢀ=ꢀ25°Cꢀ(Siliconꢀlimit)  
TCꢀ=ꢀ25°Cꢀ(Packageꢀlimit)  
TCꢀ=ꢀ100°Cꢀ(Siliconꢀlimit)  
88ꢀ  
80  
ID  
A
55ꢀ  
Pulsedꢀdrainꢀcurrentꢀ(TCꢀ=ꢀ25°C,ꢀtpꢀlimitedꢀbyꢀTjmax  
)
IDꢀpulse  
EAS  
320ꢀ  
289ꢀ  
A
mJ  
V
Avalancheꢀenergy,ꢀsingleꢀpulseꢀ(L=0.5mH,ꢀRg=25)[1]  
GateꢁSourceꢀvoltage  
VGS  
±20  
Powerꢀdissipationꢀ(TCꢀ=ꢀ25°C)  
Ptot  
227ꢀ  
W
°C  
Tjꢀ,ꢀT stg  
Operatingꢀjunctionꢀandꢀstorageꢀtemperature  
ꢁ55...+150  
.ꢀNotes:1.EASꢀwasꢀtestedꢀatꢀstartingꢀTjꢀ=ꢀ25,ꢀꢀIDꢀ=ꢀ34A.  
©China Resources Microelectronics (Chongqing) Limited  
Page 1  

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