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CRST155N20N3 PDF预览

CRST155N20N3

更新时间: 2024-11-19 15:19:11
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
9页 504K
描述
TO-220

CRST155N20N3 数据手册

 浏览型号CRST155N20N3的Datasheet PDF文件第2页浏览型号CRST155N20N3的Datasheet PDF文件第3页浏览型号CRST155N20N3的Datasheet PDF文件第4页浏览型号CRST155N20N3的Datasheet PDF文件第5页浏览型号CRST155N20N3的Datasheet PDF文件第6页浏览型号CRST155N20N3的Datasheet PDF文件第7页 
CRST155N20N3  
SkyMOS3ꢀNꢁMOSFETꢀ200V,ꢀ13mꢂ,ꢀ80A  
华润微电子(重庆)有限公司  
Features  
Product Summary  
VDS  
200V  
13mꢂ  
80A  
•ꢀUsesꢀCRM(CQ)ꢀadvancedꢀSkyMOS3ꢀtechnology  
•ꢀExtremelyꢀlowꢀonꢁresistanceꢀRDS(on)  
•ꢀExcellentꢀQgxRDS(on)ꢀproduct(FOM)  
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀcriteria  
RDS(on)  
IDꢀ  
100% Avalanche Tested  
100% DVDS Tested  
Applications  
•ꢀMotorꢀcontrolꢀandꢀdrive  
•ꢀBatteryꢀmanagement  
•ꢀUPSꢀ(UninterrupibleꢀPowerꢀSupplies)  
CRST155N20N3  
Package Marking and Ordering Information  
MARKING  
流通码  
Package  
TOꢁ220  
ReelꢀSize  
N/A  
TapeꢀWidth  
N/A  
Qty  
Packing  
Tube  
CRST155N20N3  
50pcs  
Absolute Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
VDS  
Drainꢁsourceꢀvoltage  
200  
V
Continuousꢀdrainꢀcurrent  
TCꢀ=ꢀ25°Cꢀ(Siliconꢀlimit)  
TCꢀ=ꢀ25°Cꢀ(Packageꢀlimit)  
TCꢀ=ꢀ100°Cꢀ(Siliconꢀlimit)  
82ꢀ  
160  
52ꢀ  
ID  
A
Pulsedꢀdrainꢀcurrentꢀ(TCꢀ=ꢀ25°C,ꢀtpꢀlimitedꢀbyꢀTjmax  
)
IDꢀpulse  
EAS  
329ꢀ  
190ꢀ  
A
mJ  
V
Avalancheꢀenergy,ꢀsingleꢀpulseꢀ(L=0.5mH,ꢀRg=25)[1]  
GateꢁSourceꢀvoltage  
VGS  
±20  
Powerꢀdissipationꢀ(TCꢀ=ꢀ25°C)  
Ptot  
234ꢀ  
W
°C  
Tjꢀ,ꢀT stg  
Operatingꢀjunctionꢀandꢀstorageꢀtemperature  
ꢁ55...+150  
.ꢀNotes:1.EASꢀisꢀtestedꢀatꢀstartingꢀTjꢀ=ꢀ25,ꢀLꢀ=ꢀ0.5mH,ꢀIASꢀ=ꢀ27.5A,ꢀVgs=10V.  
©China Resources Microelectronics (Chongqing) Limited  
Page 1  

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