Datasheet > CRST128N10L2

CRST128N10L2

更新时间： 2024-03-03 10:09:44

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
9页	462K
描述
TO-220

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中文翻译

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数据手册

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CRST128N10L2 数据手册

CRST128N10L2

SkyMOS2ꢀNꢁMOSFETꢀ100V,ꢀ11.4mꢂ,ꢀ60A

华润微电子(重庆)有限公司

Features

Product Summary

V_DS

100V

•ꢀUsesꢀCRM(CQ)ꢀadvancedꢀSkyMOS2ꢀtechnology

•ꢀExtremelyꢀlowꢀonꢁresistanceꢀR_DS(on)

•ꢀExcellentꢀQ_gxR_DS(on)ꢀproduct(FOM)

•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀcriteria

R_{DS(on)@10Vꢀtyp}

R_{DS(on)@4.5Vꢀtyp}

I_Dꢀ

11.4mꢂ

14.6mꢂ

60A

Applications

•ꢀSynchronousꢀRectificationꢀforꢀAC/DCꢀQuickꢀCharger

•ꢀBatteryꢀmanagement

100% Avalanche Tested

•ꢀUPSꢀ(UninterrupibleꢀPowerꢀSupplies)

CRST128N10L2

Package Marking and Ordering Information

Partꢀ#

Marking

ꢁ

Package

TOꢁ220

ReelꢀSize TapeꢀWidth

Qty

Packing

Tube

CRST128N10L2

N/A

50pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drainꢁsourceꢀvoltage

100

Continuousꢀdrainꢀcurrent

T_Cꢀ=ꢀ25°Cꢀ(Siliconꢀlimit)

T_Cꢀ=ꢀ25°Cꢀ(Packageꢀlimit)

T_Cꢀ=ꢀ100°Cꢀ(Siliconꢀlimit)

62ꢀ

I_D

Pulsedꢀdrainꢀcurrentꢀ(T_Aꢀ=ꢀ25°C,ꢀt_pꢀlimitedꢀbyꢀT_jmax

)

I_Dꢀpulse

E_AS

240

64ꢀ

Avalancheꢀenergy,ꢀsingleꢀpulseꢀ(L=0.5mH,ꢀRg=25Ω)

GateꢁSourceꢀvoltage

V_GS

±20

Powerꢀdissipationꢀ(T_Cꢀ=ꢀ25°Cꢀ)

P_tot

227.3ꢀ

ꢁ55...+150

°C

T_jꢀ,ꢀT _stg

Operatingꢀjunctionꢀandꢀstorageꢀtemperature

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