Datasheet > CRST074N10L2

CRST074N10L2

更新时间： 2024-03-03 10:11:20

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
9页	548K
描述
TO-220

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数据手册

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CRST074N10L2 数据手册

CRST074N10L2

SkyMOS2ꢀNꢁMOSFETꢀ100V,ꢀ6.8mꢂ,ꢀ80A

华润微电子(重庆)有限公司

Features

Product Summary

V_DS

100V

6.8mꢂ

80A

•ꢀUsesꢀCRM(CQ)ꢀadvancedꢀSkyMOS2ꢀtechnology

•ꢀExtremelyꢀlowꢀonꢁresistanceꢀR_DS(on)

•ꢀExcellentꢀQ_gxR_DS(on)ꢀproduct(FOM)

•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀcriteria

R_DS(on)

I_Dꢀ

Applications

•ꢀSynchronousꢀRectificationꢀforꢀAC/DCꢀQuickꢀCharger

•ꢀBatteryꢀmanagement

•ꢀUPSꢀ(UninterrupibleꢀPowerꢀSupplies)

100% Avalanche Tested

CRST074N10L2

Package Marking and Ordering Information

Partꢀ#

Marking

ꢁ

Package

TOꢁ220

ReelꢀSize

TapeꢀWidth

N/A

Qty

Packing

Tube

CRST074N10L2

N/A

50pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drainꢁsourceꢀvoltage

100

Continuousꢀdrainꢀcurrent

T_Cꢀ=ꢀ25°Cꢀ(Siliconꢀlimit)

T_Cꢀ=ꢀ25°Cꢀ(Packageꢀlimit)

T_Cꢀ=ꢀ100°Cꢀ(Siliconꢀlimit)

120ꢀ

I_D

76ꢀ

Pulsedꢀdrainꢀcurrentꢀ(T_Cꢀ=ꢀ25°C,ꢀt_pꢀlimitedꢀbyꢀT_jmax

AvalancheꢀCurrentꢀ(L=0.5mH)

)

I_Dꢀpulse

I_ASꢀ

320ꢀ

21ꢀ

E_AS

Avalancheꢀenergy,ꢀsingleꢀpulseꢀ(L=0.5mH,ꢀRg=25Ω)

RepeativeꢀavalancheꢀCurrentꢀ(L=0.5mH)*

Repeativeꢀavalancheꢀ(L=0.5mH)*

110ꢀ

15ꢀ

I_ARꢀ

E_AR

56ꢀ

V_GS

GateꢁSourceꢀvoltage

±20

Powerꢀdissipationꢀ(T_Cꢀ=ꢀ25°C)

P_tot

227ꢀ

°C

T_jꢀ,ꢀT _stg

Operatingꢀjunctionꢀandꢀstorageꢀtemperature

ꢁ55...+150

*Repetitiveꢀrating,ꢀpulseꢀwidthꢀlimitedꢀbyꢀjunctionꢀtemperatureꢀTJ(MAX)=150°C.ꢀRatingsꢀareꢀbasedꢀonꢀlowꢀfrequencyꢀandꢀ

dutyꢀcyclesꢀtoꢀkeepꢀinitialꢀTJꢀ=25°C.

©China Resources Microelectronics (Chongqing) Limited

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