CRST052N15N3Z, CRSS049N15N3Z
SkyMOS3 N-MOSFET 150V, 4mΩ, 160A
华润微电子(重庆)有限公司
Features
Product Summary
VDS
• Uses CRM(CQ) advanced SkyMOS3 technology
• Extremely low on-resistance RDS(on)
• Excellent QgxRDS(on) product(FOM)
• Qualified according to JEDEC criteria
150V
4mΩ
160A
RDS(on)
ID
100% DVDS Tested
100% Avalanche Tested
Applications
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
CRST052N15N3Z
CRSS049N15N3Z
Package Marking and Ordering Information
Part #
Marking
Package
TO-220
TO-263
Reel Size
Tape Width
N/A
Qty
Packing
Tube
CRST052N15N3Z
CRSS049N15N3Z
CRST052N15N3Z
CRSS049N15N3Z
N/A
N/A
50pcs
Tape
N/A
1000pcs
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
VDS
Drain-source voltage
150
V
Continuous drain current
TC = 25°C (Silicon limit)
TC = 25°C (Package limit)
TC = 100°C (Silicon limit)
168
160
106
ID
A
Pulsed drain current (TC = 25°C, tp limited by Tjmax
)
ID pulse
EAS
640
1225
A
mJ
V
Avalanche energy, single pulse (ID = 70A, Rg=25Ω)[1]
Gate-Source voltage
VGS
±20
Power dissipation (TC = 25°C)
Ptot
284
W
°C
Tj , T stg
Operating junction and storage temperature
-55...+150
Soldering temperature, wave soldering only allowed at leads
(1.6mm from case for 10s)
Tsold
260
°C
※. Notes:1.EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS = 70A, VGS = 10V.
Rev 1.0
©China Resources Microelectronics (Chongqing) Limited
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