Datasheet > CRST058N12N

CRST058N12N

更新时间： 2024-03-03 10:09:59

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	1201K
描述
TO-220

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数据手册

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CRST058N12N 数据手册

CRST058N12N,CRSS055N12N

华润微电子(重庆)有限公司

SkyMOS3ꢀNꢁMOSFETꢀ120V,ꢀ4.8mꢂ,ꢀ130A

Features

Product Summary

V_DS

120V

•ꢀUsesꢀCRM(CQ)ꢀadvancedꢀSkyMOS3ꢀtechnology

•ꢀExtremelyꢀlowꢀonꢁresistanceꢀR_DS(on)

•ꢀExcellentꢀQ_gxR_DS(on)ꢀproduct(FOM)

•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀcriteria

R_DS(on)

I_Dꢀ

4.8mꢂ

130A

Applications

100% Avalanche Tested

100% DVDS Tested

•ꢀMotorꢀcontrolꢀandꢀdrive

•ꢀBatteryꢀmanagement

•ꢀUPSꢀ(UninterrupibleꢀPowerꢀSupplies)

100% Avalanche Tested

CRST058N12N

CRSS055N12N

Package Marking and Ordering Information

Partꢀ#

Marking

Package

TOꢁ220

TOꢁ263

ReelꢀSize

TapeꢀWidth

N/A

Qty

Packing

Tube

CRST058N12N

CRSS055N12N

CRST058N12N

CRSS055N12N

N/A

50pcs

Tube

N/A

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drainꢁsourceꢀvoltage

120

Continuousꢀdrainꢀcurrent

T_Cꢀ=ꢀ25°Cꢀ(Siliconꢀlimit)

T_Cꢀ=ꢀ25°Cꢀ(Packageꢀlimit)

T_Cꢀ=ꢀ100°Cꢀ(Siliconꢀlimit)

134ꢀ

180

85ꢀ

I_D

Pulsedꢀdrainꢀcurrentꢀ(T_Cꢀ=ꢀ25°C,ꢀt_pꢀlimitedꢀbyꢀT_jmax

)

I_Dꢀpulse

E_AS(Noteꢀ1)

V_GS

536ꢀ

196ꢀ

Avalancheꢀenergy,ꢀsingleꢀpulseꢀ(L=0.5mH,ꢀRg=25Ω)^[1]

GateꢁSourceꢀvoltage

±20

Powerꢀdissipationꢀ(T_Cꢀ=ꢀ25°C)

P_tot

202ꢀ

°C

T_jꢀ,ꢀT _stg

Operatingꢀjunctionꢀandꢀstorageꢀtemperature

ꢁ55...+150

※.ꢀNotes:1.EASꢀisꢀFTꢀMonitoringꢀtestedꢀatꢀstartingꢀTjꢀ=ꢀ25℃,ꢀLꢀ=ꢀ0.5mH,ꢀIASꢀ=ꢀ28A,ꢀVgs=10V.

©China Resources Microelectronics (Chongqing) Limited

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