Datasheet > CRST036N12N3Z

CRST036N12N3Z

更新时间： 2024-06-27 12:14:08

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
11页	1511K
描述
TO-220

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中文翻译

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数据手册

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CRST036N12N3Z 数据手册

CRST036N12N3Z,CRSS033N12N3Z

华润微电子(重庆)有限公司

SkyMOS3 N-MOSFET 120V, 2.8mΩ, 180A

Features

Product Summary

V_DS

120V

• Uses CRM(CQ) advanced SkyMOS3 technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Qualified according to JEDEC criteria

R_DS(on).typ

I_D

2.8mΩ

180A

100% DVDS Tested

Applications

100% Avalanche Tested

• Motor control and drive

• Battery management System

• UPS (Uninterrupible Power Supplies)

CRST036N12N3Z

CRSS033N12N3Z

Package Marking and Ordering Information

Part #

Marking

Package

TO-220

TO-263

Packing

Tube

Reel Size Tape Width

Qty

CRST036N12N3Z CRST036N12N3Z

CRSS033N12N3Z CRSS033N12N3Z

N/A

50pcs

Tape

1000pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

120

Continuous drain current

T_C= 25°C (Silicon limit)

T_C= 25°C (Package limit)

T_C= 100°C (Silicon limit)

220

180

140

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

)

I_{D pulse}

E_AS

720

1479

Avalanche energy, single pulse (ID = 77A, Rg=25Ω)^[1]

Gate-Source voltage

V_GS

±20

Power dissipation (T_C= 25°C)

P_tot

300

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

※. Notes:

1.EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS =77A, VGS = 10V.

Rev 1.0

©China Resources Microelectronics (Chongqing) Limited

Page 1

12 3 4 5 6 7...11

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