Datasheet > CRSS152N20N3

CRSS152N20N3

更新时间： 2024-11-21 15:19:39

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	1421K
描述
TO-263(或D2PAK)

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中文翻译

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数据手册

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CRSS152N20N3 数据手册

CRST155N20N3,CRSS152N20N3

SkyMOS3 N-MOSFET 200V, 13mΩ, 80A

华润微电子(重庆)有限公司

Features

Product Summary

V_DS

200V

13mΩ

80A

• Uses CRM(CQ) advanced SkyMOS3 technology

• Extremely low on-resistance RDS(on)

• Excellent QgxRDS(on) product(FOM)

• Qualified according to JEDEC criteria

R_DS(on)

I_D

100% Avalanche Tested

100% DVDS Tested

Applications

• Motor control and drive

• Battery management

• UPS (Uninterrupible Power Supplies)

CRST155N20N3

CRSS152N20N3

Package Marking and Ordering Information

MARKING

流通码

Package

TO-220

TO-263

Reel Size

N/A

Tape Width

N/A

Qty

Packing

Tube

CRST155N20N3

CRSS152N20N3

50pcs

Tape

N/A

1000pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

200

Continuous drain current

T_C= 25°C (Silicon limit)

T_C= 25°C (Package limit)

T_C= 100°C (Silicon limit)

160

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

)

I_{D pulse}

E_AS

328

190

Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)^[1]

Gate-Source voltage

V_GS

±20

Power dissipation (T_C= 25°C)

P_tot

234

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

※. Notes:1.EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS = 27.5A, Vgs=10V.

Rev2.0

©China Resources Microelectronics (Chongqing) Limited

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